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1KSMB10AHM4G

Taiwan Semiconductor

1KSMB10AHM4G by Taiwan Semiconductor

1KSMB10AHM4G by Taiwan Semiconductor is a single transient suppression device with 1000W power dissipation. It operates b/w -55 to 175 °C and has a breakdown voltage range of 9.5-10.5V, making it ideal for automotive applications requiring high surge protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,108 parts In-Stock

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VNN

France . 100 parts In-Stock

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100

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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AZTECH Wire

Italy . 582 parts In-Stock

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$12.440

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Bastille Electronics

Australia . 3,614 parts In-Stock

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Overview

Enhance your electronics with the 1KSMB10AHM4G by Taiwan Semiconductor, a top-quality transient suppression device that offers superior protection against voltage spikes. Manufactured by Taiwan Semiconductor, known for their innovative solutions, this product is perfect for a wide range of applications. With its high power dissipation and wide operating temperature range, you can trust in the reliability and performance of this device. Invest in peace of mind and safeguard your equipment with the 1KSMB10AHM4G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection against external elements, ensuring the longevity of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

This high power dissipation capacity allows the device to handle sudden voltage spikes or surges effectively, protecting connected components from damage.

Minimum Operating Temperature: -55 °C

The wide operating temperature range of -55 to 175°C makes this device suitable for use in various environmental conditions, enhancing its versatility.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures the quality and reliability of the device, making it a trustworthy choice for automotive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode ensures efficient suppression of voltage transients, protecting sensitive electronic equipment from damage.

Technical Specifications

Transient Suppression Devices 1KSMB10AHM4G attributes and parameters. Explore more Transient Suppression Devices devices from Taiwan Semiconductor

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

10.5 V

Minimum Breakdown Voltage:

9.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

8.55 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1KSMB10AHM4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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