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1KSMB10AR5

Taiwan Semiconductor

1KSMB10AR5 by Taiwan Semiconductor

1KSMB10AR5 by Taiwan Semiconductor is a 1000W TRANS VOLTAGE SUPPRESSOR DIODE with 10V Breakdown Voltage, ideal for transient suppression applications. It operates b/w -55 to 175 °C and has a Max Clamping Voltage of 14.5V, making it suitable for high-power protection in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,181 parts In-Stock

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1,181

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Nova Conductors

Japan . 300 parts In-Stock

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300

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VNN

France . 45 parts In-Stock

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45

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 610 parts In-Stock

1+ parts

$7.615

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610

$7.615

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Bastille Electronics

Australia . 349 parts In-Stock

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349

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Overview

Unleash the power of protection with the 1KSMB10AR5 by Taiwan Semiconductor. This high-quality Transient Suppression Device offers unmatched reliability and durability, making it the ideal choice for a wide range of applications. With its impressive maximum non-repetitive peak reverse power dissipation of 1000 W and nominal breakdown voltage of 10 V, this product provides superior protection against voltage spikes and surges. Invest in peace of mind and safeguard your electronics with the 1KSMB10AR5 - because when it comes to quality and performance, Taiwan Semiconductor delivers excellence every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and resistance to external elements, making this product a good choice for long-term use.

Config: SINGLE

The single configuration simplifies installation and maintenance, making this product a convenient choice for users.

Surface Mount: YES

With surface mount capability, this product is easy to integrate into various electronic devices, making it a versatile choice for a range of applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

The high maximum power dissipation allows for reliable protection against transient voltage spikes, making this product suitable for demanding environments.

Nominal Breakdown Voltage: 10 V

The nominal breakdown voltage of 10 V provides effective protection against voltage surges, making this product a reliable choice for safeguarding electronic circuits.

Maximum Reverse Current: 10 uA

With a low maximum reverse current, this product ensures minimal power loss and efficient operation, making it an energy-efficient choice.

Package Shape: RECTANGULAR

The rectangular package shape offers easy integration and space-saving benefits, making this product a practical choice for compact designs.

Reverse Test Voltage: 8.55 V

The reverse test voltage of 8.55 V ensures accurate performance under varying conditions, making this product a dependable choice for critical applications.

No. of Terminals: 2

The two terminals provide a simple connection interface, making this product easy to install and use for both professionals and DIY enthusiasts.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for efficient PCB layout and space optimization, making this product a preferred choice for compact electronic designs.

Technical Specifications

Transient Suppression Devices 1KSMB10AR5 attributes and parameters. Explore more Transient Suppression Devices devices from Taiwan Semiconductor

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

10.5 V

Minimum Breakdown Voltage:

9.5 V

Nominal Breakdown Voltage:

10 V

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Maximum Repetitive Peak Reverse Voltage:

8.55 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

8.55 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1KSMB10AR5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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