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1KSMB18CAHR5G

Taiwan Semiconductor

1KSMB18CAHR5G by Taiwan Semiconductor

1KSMB18CAHR5G by Taiwan Semiconductor is a single transient suppression device with 1000W power dissipation. It operates b/w -55 to 175°C, with breakdown voltage ranging from 17.1V to 18.9V. Ideal for protecting electronic circuits in automotive applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 3,424 parts In-Stock

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3,424

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Vyrian

USA . 175 parts In-Stock

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175

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 245 parts In-Stock

1+ parts

$9.212

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245

$9.212

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Bastille Electronics

Australia . 195 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the 1KSMB18CAHR5G by Taiwan Semiconductor. As a leading manufacturer in the industry, Taiwan Semiconductor delivers top-quality Transient Suppression Devices that ensure reliable performance and durability. This product is designed to safeguard against voltage spikes and surges, providing peace of mind for your valuable equipment. With its high power dissipation and wide operating temperature range, the 1KSMB18CAHR5G offers unmatched protection for a variety of applications. Trust in Taiwan Semiconductor for superior quality and protection for your electronics.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material offers good durability and protection for the device.

Config

SINGLE - Single configuration simplifies installation and maintenance of the device.

Surface Mount

YES - Surface mount capability allows for easy integration into circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation

1000 W - High power dissipation capacity ensures reliable protection against transient surges.

Package Shape

RECTANGULAR - Rectangular shape allows for efficient use of space in circuit designs.

No. of Terminals

2 - Two terminals provide simple connectivity for installation.

Package Style (Meter)

SMALL OUTLINE - Small outline package style is ideal for compact electronic designs.

Maximum Operating Temperature

175 °C - High operating temperature range ensures device performance in various environments.

Minimum Operating Temperature

55 °C - Low operating temperature allows for use in extreme conditions.

Terminal Finish

MATTE TIN - Matte tin finish provides good conductivity and solderability for terminals.

Terminal Position

DUAL - Dual terminal position offers flexibility in installation options.

Maximum Power Dissipation

5 W - Low power dissipation helps improve energy efficiency of the device.

Minimum Breakdown Voltage

17.1 V - Low minimum breakdown voltage ensures effective protection against surges.

Maximum Breakdown Voltage

18.9 V - High maximum breakdown voltage provides a wide range of surge protection.

Reference Standard

AEC-Q101 - Compliance with AEC-Q101 ensures high reliability and quality standards.

Diode Type

TRANS VOLTAGE SUPPRESSOR DIODE - Trans voltage suppressor diode type offers efficient transient suppression capabilities.

Technology

AVALANCHE - Avalanche technology enhances the device's ability to handle high-energy transients.

Terminal Form

C BEND - C bend terminal form offers secure connection in circuit installations.

Maximum Repetitive Peak Reverse Voltage

15.3 V - Maximum repetitive peak reverse voltage provides continuous protection against surges.

Polarity

BIDIRECTIONAL - Bidirectional polarity allows for protection from surges in both directions.

Diode Element Material

SILICON - Silicon diode element material ensures long-lasting performance and reliability.

Technical Specifications

Transient Suppression Devices 1KSMB18CAHR5G attributes and parameters. Explore more Transient Suppression Devices devices from Taiwan Semiconductor

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

18.9 V

Minimum Breakdown Voltage:

17.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

15.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1KSMB18CAHR5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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