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1KSMB10AM4G

Taiwan Semiconductor

1KSMB10AM4G by Taiwan Semiconductor

1KSMB10AM4G by Taiwan Semiconductor is a single transient suppression device with 1000W power dissipation and 10V breakdown voltage. Ideal for protecting electronic circuits from voltage spikes in applications requiring unidirectional polarity, such as automotive electronics and industrial control systems.

Median Price

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Lifecycle Status

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3

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1k+

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VNN

France . 24,040 parts In-Stock

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Vyrian

USA . 863 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 287 parts In-Stock

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$11.099

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Bastille Electronics

Australia . 2,158 parts In-Stock

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Overview

Discover the power of protection with the 1KSMB10AM4G by Taiwan Semiconductor. As a leading manufacturer in the industry, Taiwan Semiconductor delivers top-quality transient suppression devices that offer unmatched reliability and performance. Ideal for a wide range of applications, these devices provide essential protection against voltage spikes and surges, ensuring the safety and longevity of your electronic equipment. Upgrade your system with the 1KSMB10AM4G and experience peace of mind knowing your devices are safeguarded against unexpected electrical disturbances. Trust Taiwan Semiconductor for superior quality and superior protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the device, making it suitable for various environmental conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

High power dissipation capability ensures that the device can handle sudden surges or spikes effectively without getting damaged.

Nominal Breakdown Voltage: 10 V

A stable breakdown voltage ensures reliable protection against overvoltage situations.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows the device to function efficiently in harsh conditions.

Package Style (Meter): SMALL OUTLINE

Compact package design makes it easy to integrate into various circuits and systems.

Technical Specifications

Transient Suppression Devices 1KSMB10AM4G attributes and parameters. Explore more Transient Suppression Devices devices from Taiwan Semiconductor

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

10.5 V

Minimum Breakdown Voltage:

9.5 V

Nominal Breakdown Voltage:

10 V

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Maximum Repetitive Peak Reverse Voltage:

8.55 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

8.55 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1KSMB10AM4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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