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1KSMB10AHR5

Taiwan Semiconductor

1KSMB10AHR5 by Taiwan Semiconductor

1KSMB10AHR5 by Taiwan Semiconductor is a 1000W TRANS VOLTAGE SUPPRESSOR DIODE with 10V breakdown voltage. It operates b/w -55 to 175 °C and has a max clamping voltage of 14.5V. Ideal for transient suppression in electronic circuits.

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VNN

France . 724 parts In-Stock

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Vyrian

USA . 534 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 703 parts In-Stock

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Bastille Electronics

Australia . 1,640 parts In-Stock

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Overview

Experience superior protection with the Taiwan Semiconductor 1KSMB10AHR5 Transient Suppression Device. Manufactured by a trusted leader in the industry, this product offers reliable defense against voltage spikes, making it perfect for a variety of applications. From automotive to industrial use, this device provides peace of mind by safeguarding your equipment from potential damage. Trust in Taiwan Semiconductor for quality, value, and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

The high maximum non repetitive peak reverse power dissipation allows the device to handle sudden surges or spikes in voltage without being damaged.

Nominal Breakdown Voltage: 10 V

The nominal breakdown voltage of 10 V ensures that the device effectively suppresses excess voltage and protects connected circuits.

Maximum Reverse Current: 10 uA

The low maximum reverse current helps in maintaining the efficiency and reliability of the device by minimizing current leakage in reverse bias conditions.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175°C allows the device to function effectively in a wide range of environmental conditions.

Technical Specifications

Transient Suppression Devices 1KSMB10AHR5 attributes and parameters. Explore more Transient Suppression Devices devices from Taiwan Semiconductor

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

10.5 V

Minimum Breakdown Voltage:

9.5 V

Nominal Breakdown Voltage:

10 V

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

8.55 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

8.55 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1KSMB10AHR5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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