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SMBJ40AHR5G

Taiwan Semiconductor

SMBJ40AHR5G by Taiwan Semiconductor

SMBJ40AHR5G by Taiwan Semiconductor is a unidirectional Trans Voltage Suppressor Diode with 40V max repetitive peak reverse voltage. It features a 600W non-repetitive peak reverse power dissipation and operates b/w -55 to 150°C. Ideal for transient suppression in various electronic applications.

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2

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1k+

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Vyrian

USA . 3,993 parts In-Stock

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3,993

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 548 parts In-Stock

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$5.239

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548

$5.239

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Component Stockers USA

USA . 642 parts In-Stock

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$99.990

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642

$99.990

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Aranea Global

USA . 2,000 parts In-Stock

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Overview

Discover the Taiwan Semiconductor SMBJ40AHR5G, a top-of-the-line Transient Suppression Device that offers unmatched quality and reliability. With its cutting-edge technology and AEC-Q101 reference standard, this diode ensures superior performance in a variety of applications. From automotive to industrial electronics, this single-configured device provides maximum protection with its high breakdown voltage and avalanche technology. Trust Taiwan Semiconductor for premium products that deliver exceptional value and peace of mind to customers seeking top-notch transient suppression solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Can handle high peak power levels, making it suitable for applications with potential voltage spikes.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance or reliability.

Minimum Operating Temperature: -55 °C

Capable of functioning in extremely low temperatures, making it versatile for various environments.

Technology: AVALANCHE

Utilizes avalanche breakdown for transient suppression, providing efficient protection against voltage surges.

Technical Specifications

Transient Suppression Devices SMBJ40AHR5G attributes and parameters. Explore more Transient Suppression Devices devices from Taiwan Semiconductor

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

49.1 V

Minimum Breakdown Voltage:

44.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMBJ40AHR5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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