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PGSMAJ54AHF4G

Taiwan Semiconductor

PGSMAJ54AHF4G by Taiwan Semiconductor

PGSMAJ54AHF4G by Taiwan Semiconductor is a single transient suppression device with 400W peak power dissipation. It has a breakdown voltage of 63.15V and max clamping voltage of 87.1V, making it ideal for protecting electronic circuits from voltage spikes in automotive and industrial applications.

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Lifecycle Status

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Vyrian

USA . 7,158 parts In-Stock

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Nova Conductors

Japan . 69 parts In-Stock

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AZTECH Wire

Italy . 756 parts In-Stock

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Bastille Electronics

Australia . 76 parts In-Stock

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Overview

Power up your electronics with the PGSMAJ54AHF4G by Taiwan Semiconductor! Crafted with precision and expertise, this transient suppression device offers unparalleled protection against voltage spikes and surges. Ideal for a wide range of applications, this product ensures reliable performance and peace of mind. Experience the quality and assurance of Taiwan Semiconductor, and let the PGSMAJ54AHF4G provide you with the value, benefits, and advantages you deserve. Upgrade your devices today with this top-notch solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the product lightweight and durable, suitable for a wide range of applications.

Nominal Breakdown Voltage: 63.15 V

The high breakdown voltage ensures protection against voltage surges, making this product reliable for transient suppression.

Maximum Power Dissipation: 1 W

With a high maximum power dissipation capability, this product can handle surges effectively without being damaged.

Technology: AVALANCHE

The use of avalanche technology allows for fast response times and high energy handling capacity, making this product efficient in suppressing transients.

Maximum Clamping Voltage: 87.1 V

The low clamping voltage ensures that connected devices are protected by limiting the voltage spike to a safe level.

Technical Specifications

Transient Suppression Devices PGSMAJ54AHF4G attributes and parameters. Explore more Transient Suppression Devices devices from Taiwan Semiconductor

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

66.3 V

Minimum Breakdown Voltage:

60 V

Nominal Breakdown Voltage:

63.15 V

Maximum Clamping Voltage:

87.1 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Reference Standard:

AEC-Q101; IEC-61249-2-21

Maximum Repetitive Peak Reverse Voltage:

54 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

54 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PGSMAJ54AHF4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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