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NXP Semiconductors PIN Diodes 25

PIN Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Maximum Diode Forward Resistance Diode Resistive Test Current Diode Resistive Test Frequency Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Nominal Minority Carrier Lifetime Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
BAP50-03,135 by NXP Semiconductors

BAP50-03,135

NXP Semiconductors

NXP Semiconductors' BAP50-03,135 is a PIN diode with 50V breakdown voltage and 40 ohm forward resistance. Ideal for RF applications, it operates up to 150°C, has 0.55 pF capacitance, and can withstand peak reflow at 260°C for 30s.

50 V

.55 pF

40 ohm

.5 mA

100 MHz

PIN DIODE

e3

1

150 Cel

260

1 V

PIN Diodes

YES

TIN

30

BAP1321-02,115 by NXP Semiconductors

BAP1321-02,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH VOLTAGE

ATTENUATOR; SWITCHING

60 V

SINGLE

.45 pF

.4 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-F2

e3

.5 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.715 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

FLAT

DUAL

30

BAP1321-03,115 by NXP Semiconductors

BAP1321-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.45 pF

.4 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G2

e3

.5 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP1321-04,215 by NXP Semiconductors

BAP1321-04,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.45 pF

.42 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

TO-236AB

R-PDSO-G3

e3

.5 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-03,115 by NXP Semiconductors

BAP50-03,115

NXP Semiconductors

The NXP Semiconductors BAP50-03,115 is a PIN diode with a max forward resistance of 5 ohm and diode capacitance of 0.55 pF. It operates b/w -65 to 150 °C and has a breakdown voltage of 50 V. Ideal for RF switches, attenuators, and phase shifters in communication systems.

50 V

SINGLE

.55 pF

.55 pF

SILICON

5 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

1 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-04W,115 by NXP Semiconductors

BAP50-04W,115

NXP Semiconductors

The NXP Semiconductors BAP50-04W,115 is a PIN diode with 2 elements in series connected configuration. It has a max diode capacitance of 0.6 pF and operates b/w -65°C to 150°C. Ideal for applications requiring high-speed switching and RF signal routing in small outline packages.

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.6 pF

.45 pF

SILICON

5 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1.05 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-05,215 by NXP Semiconductors

BAP50-05,215

NXP Semiconductors

The NXP Semiconductors BAP50-05,215 is a PIN diode with common cathode, 2 elements. It has a max diode capacitance of 0.6 pF and operates b/w -65 to 150 °C. Ideal for applications requiring high-frequency switching such as RF switches and attenuators due to its low forward resistance and breakdown voltage of 50 V.

50 V

COMMON CATHODE, 2 ELEMENTS

.6 pF

.6 pF

SILICON

40 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

1 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-05W,115 by NXP Semiconductors

BAP50-05W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

50 V

COMMON CATHODE, 2 ELEMENTS

.6 pF

.45 pF

SILICON

5 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1.05 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.24 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP63-02,115 by NXP Semiconductors

BAP63-02,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.32 pF

.36 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-F2

e3

.31 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.715 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

FLAT

DUAL

30

BAP63-03,115 by NXP Semiconductors

BAP63-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.32 pF

.4 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G2

e3

.31 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP63-05W,115 by NXP Semiconductors

BAP63-05W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

COMMON CATHODE, 2 ELEMENTS

.35 pF

.4 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G3

e3

.31 us

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.24 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP64-04,215 by NXP Semiconductors

BAP64-04,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH VOLTAGE

ATTENUATOR; SWITCHING

175 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.35 pF

.52 pF

SILICON

40 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G3

e3

1.55 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP64-05,215 by NXP Semiconductors

BAP64-05,215

NXP Semiconductors

The NXP Semiconductors BAP64-05,215 is a PIN diode with common cathode configuration and 2 elements. It operates in the S band frequency range and has a max diode capacitance of 0.35 pF. Ideal for attenuator and switching applications, it can withstand temperatures from -65 to 150°C while offering a max power dissipation of 0.25 W.

HIGH VOLTAGE

ATTENUATOR; SWITCHING

175 V

COMMON CATHODE, 2 ELEMENTS

.35 pF

.52 pF

SILICON

40 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G3

e3

1.55 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP65-03,115 by NXP Semiconductors

BAP65-03,115

NXP Semiconductors

BAP65-03,115 by NXP Semiconductors is a single PIN diode with a max diode capacitance of 0.9 pF. It is used in applications such as attenuators and switching, with a max operating temperature of 150°C and a min operating temperature of -65°C.

ATTENUATOR; SWITCHING

30 V

SINGLE

.9 pF

.65 pF

SILICON

.9 ohm

5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

.17 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAT18,215 by NXP Semiconductors

BAT18,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

35 V

SINGLE

1 pF

.75 pF

SILICON

.7 ohm

5 mA

100 MHz

PIN DIODE

TO-236AB

R-PDSO-G3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

20 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP70AM,135 by NXP Semiconductors

BAP70AM,135

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.25 pF

SILICON

1.9 ohm

PIN DIODE

1.1 V

R-PDSO-G6

e3

1.25 us

1

4

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.3 W

Not Qualified

50 V

.1 uA

50 V

Other Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP70-04W,115 by NXP Semiconductors

BAP70-04W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.3 pF

.6 pF

SILICON

1.9 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1.25 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.26 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP70-03,115 by NXP Semiconductors

BAP70-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH VOLTAGE

ATTENUATOR

50 V

SINGLE

.25 pF

.57 pF

SILICON

1.9 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

1.25 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP63LX,315 by NXP Semiconductors

BAP63LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.3 pF

.34 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

e3

.32 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.135 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP55L,315 by NXP Semiconductors

BAP55L,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

SINGLE

.28 pF

SILICON

.7 ohm

PIN DIODE

S BAND

R-PBCC-N2

e3

.28 us

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.5 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP51LX,315 by NXP Semiconductors

BAP51LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.4 pF

.3 pF

SILICON

1.5 ohm

500 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-N2

e3

.55 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.14 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Tin (Sn)

NO LEAD

DUAL

30

BAP51L,315 by NXP Semiconductors

BAP51L,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.4 pF

SILICON

1.5 ohm

PIN DIODE

S BAND

R-PBCC-N2

e3

.55 us

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.5 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP51-04W,115 by NXP Semiconductors

BAP51-04W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.55 pF

SILICON

2.5 ohm

PIN DIODE

R-PDSO-G3

e3

.55 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.24 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAP142LX,315 by NXP Semiconductors

BAP142LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.26 pF

.25 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

e3

.11 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

.13 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Tin (Sn)

NO LEAD

BOTTOM

30

BAP1321LX,315 by NXP Semiconductors

BAP1321LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.38 pF

.32 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

.48 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.13 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM