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WRAP AROUND Diodes & Rectifiers 88

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
BAS85-M-18 by Vishay Intertechnology

BAS85-M-18

Vishay Intertechnology

Vishay Intertechnology's BAS85-M-18 is a Schottky rectifier diode with 0.24V VF, 0.2A output current, and 30V repetitive peak reverse voltage. Ideal for applications requiring fast switching speeds and low forward voltage drop in compact electronic devices. Its glass package body material and surface mount configuration make it suitable for high-temperature environments up to 125°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.24 V

O-LELF-R2

.6 A

1

1

2

125 Cel

.2 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

.2 W

Not Qualified

30 V

.005 us

Rectifier Diodes

YES

SCHOTTKY

WRAP AROUND

END

NOT SPECIFIED

LL5819L0 by Taiwan Semiconductor

LL5819L0

Taiwan Semiconductor

LL5819L0 by Taiwan Semiconductor is a Schottky rectifier diode with 40V peak reverse voltage and 1A output current. It comes in a plastic/epoxy package, suitable for surface mount applications. Operating temperature ranges from -65°C to 125°C, making it ideal for various electronic circuits.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

1

1

2

125 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

40 V

YES

SCHOTTKY

WRAP AROUND

END

NOT SPECIFIED

1N5817M-13 by Diodes Incorporated

1N5817M-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

150 Cel

-65 Cel

1 A

GLASS

ROUND

LONG FORM

Not Qualified

20 V

YES

SCHOTTKY

WRAP AROUND

END

1N5819M-13 by Diodes Incorporated

1N5819M-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

150 Cel

-65 Cel

1 A

GLASS

ROUND

LONG FORM

Not Qualified

40 V

YES

SCHOTTKY

WRAP AROUND

END

RLR4004TE-21 by ROHM

RLR4004TE-21

ROHM

ROHM's RLR4004TE-21 is a single rectifier diode with 400V max reverse voltage and 0.8A output current. Its small outline package makes it suitable for surface mount applications in isolated case connections at up to 150°C operating temperature.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-MELF-R2

1

1

2

150 Cel

.8 A

METAL

ROUND

SMALL OUTLINE

260

Not Qualified

400 V

YES

WRAP AROUND

DUAL

10

RLS4148TE-11 by ROHM

RLS4148TE-11

ROHM

ROHM's RLS4148TE-11 is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 5 uA. It operates b/w -65 to 200 °C, suitable for applications requiring small outline surface mount diodes.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

O-MELF-R2

e3

1

2 A

1

1

2

200 Cel

-65 Cel

.15 A

METAL

ROUND

SMALL OUTLINE

260

.5 W

Not Qualified

100 V

5 uA

.004 us

Rectifier Diodes

YES

Tin (Sn)

WRAP AROUND

DUAL

10

BAS383TR3 by Vishay Telefunken

BAS383TR3

Vishay Telefunken

Vishay Telefunken's BAS383TR3 is a RECTIFIER DIODE in GLASS package with 2 terminals for surface mount applications. Its ROUND shape and LONG FORM style make it ideal for end terminal positions. Perfect for various electronic circuits requiring efficient rectification.

RECTIFIER DIODE

O-LELF-R2

2

GLASS

ROUND

LONG FORM

Not Qualified

YES

WRAP AROUND

END

BYM10-400HE3/97 by Vishay Intertechnology

BYM10-400HE3/97

Vishay Intertechnology

Vishay Intertechnology's BYM10-400HE3/97 is a single rectifier diode with a max forward voltage of 1.1V and max output current of 1A. It is commonly used in applications requiring high voltage rectification, such as power supplies and automotive electronics.

FREE WHEELING DIODE, HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-213AB

O-PELF-R2

e3

1

30 A

1

1

2

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

AEC-Q101

400 V

Rectifier Diodes

YES

MATTE TIN

WRAP AROUND

END

BAS216,115 by NXP Semiconductors

BAS216,115

NXP Semiconductors

BAS216,115 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, ceramic-metal sealed co-fired body material, and operates at up to 150°C. Ideal for applications requiring low reverse recovery time and high peak reverse voltage capabilities.

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-CDSO-R2

4 A

1

1

2

150 Cel

.25 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

260

.4 W

Not Qualified

85 V

1 uA

.004 us

Rectifier Diodes

YES

WRAP AROUND

DUAL

40

BAS216,135 by NXP Semiconductors

BAS216,135

NXP Semiconductors

BAS216,135 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, ceramic-metal sealed co-fired body material, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time and low reverse current such as power supplies and battery chargers.

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-CDSO-R2

4 A

1

1

2

150 Cel

.25 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.4 W

Not Qualified

85 V

1 uA

.004 us

YES

WRAP AROUND

DUAL

NOT SPECIFIED

BAT254,115 by NXP Semiconductors

BAT254,115

NXP Semiconductors

BAT254,115 by NXP Semiconductors is a Schottky rectifier diode with a max forward voltage of 0.8V and output current of 0.2A. It has a fast reverse recovery time of 0.005us, making it suitable for high-speed applications in electronics requiring low power consumption and small outline packages. The diode's peak repetitive reverse voltage is 30V, ideal for circuits where efficient energy conversion is crucial.

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-CDSO-R2

.6 A

1

1

2

125 Cel

.2 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

30 V

.005 us

Rectifier Diodes

YES

SCHOTTKY

WRAP AROUND

DUAL

BYD17D,115 by NXP Semiconductors

BYD17D,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

225 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

200 V

1 uA

3 us

200 V

YES

AVALANCHE

WRAP AROUND

END

BYD17G,115 by NXP Semiconductors

BYD17G,115

NXP Semiconductors

BYD17G,115 by NXP Semiconductors is a single rectifier diode with a max reverse recovery time of 3 us and a max reverse current of 1 uA. It has a package shape of round and can handle a max reverse test voltage of 400 V. This diode is suitable for applications requiring high efficiency and low forward voltage drop in electronic circuits.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

450 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

400 V

1 uA

3 us

400 V

YES

AVALANCHE

WRAP AROUND

END

BYD17J,115 by NXP Semiconductors

BYD17J,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

650 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

600 V

1 uA

3 us

600 V

YES

AVALANCHE

WRAP AROUND

END

BYD17K,135 by NXP Semiconductors

BYD17K,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

800 V

3 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD37M,115 by NXP Semiconductors

BYD37M,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

FAST SOFT RECOVERY

1100 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

1000 V

1 uA

.3 us

1000 V

YES

AVALANCHE

WRAP AROUND

END

BYD77B,115 by NXP Semiconductors

BYD77B,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

100 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD77D,115 by NXP Semiconductors

BYD77D,115

NXP Semiconductors

BYD77D,115 by NXP Semiconductors is a single rectifier diode with a max output current of 0.85A and a max repetitive peak reverse voltage of 200V. It has a fast max reverse recovery time of 0.025us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode's technology is avalanche-based, ensuring efficient performance even at an operating temperature of up to 175°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

200 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

PRLL4001,115 by NXP Semiconductors

PRLL4001,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.68 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

50 V

YES

WRAP AROUND

END

NOT SPECIFIED

LLSD101A-13 by Diodes Incorporated

LLSD101A-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

e2

1

1

2

125 Cel

-55 Cel

.015 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

60 V

.001 us

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD101A-7 by Diodes Incorporated

LLSD101A-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

e2

1

1

2

125 Cel

-55 Cel

.015 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

60 V

.001 us

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD101B-7 by Diodes Incorporated

LLSD101B-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

e2

1

1

2

125 Cel

-55 Cel

.015 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

50 V

.001 us

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD101C-13 by Diodes Incorporated

LLSD101C-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

e2

1

1

2

125 Cel

-55 Cel

.015 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

40 V

.001 us

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD101C-7 by Diodes Incorporated

LLSD101C-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

e2

1

1

2

125 Cel

-55 Cel

.015 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

40 V

.001 us

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103A-13 by Diodes Incorporated

LLSD103A-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

40 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103A-7 by Diodes Incorporated

LLSD103A-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

1

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

40 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103B-13 by Diodes Incorporated

LLSD103B-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

30 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103B-7 by Diodes Incorporated

LLSD103B-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

30 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103C-13 by Diodes Incorporated

LLSD103C-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

20 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103C-7 by Diodes Incorporated

LLSD103C-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

20 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

BAV103-7 by Diodes Incorporated

BAV103-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

.125 A

GLASS

ROUND

LONG FORM

.5 W

Not Qualified

250 V

.05 us

YES

WRAP AROUND

END

DL4001-13 by Diodes Incorporated

DL4001-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

235

Not Qualified

50 V

Rectifier Diodes

YES

Tin/Lead (Sn/Pb)

WRAP AROUND

END

10

DL4002-13 by Diodes Incorporated

DL4002-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

100 V

Rectifier Diodes

YES

TIN LEAD

WRAP AROUND

END

DL4003-13 by Diodes Incorporated

DL4003-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

Rectifier Diodes

YES

TIN LEAD

WRAP AROUND

END

DL4004-13 by Diodes Incorporated

DL4004-13

Diodes Incorporated

DL4004-13 by Diodes Inc. is a single rectifier diode with max VF of 1.1V and 400V peak reverse voltage. It's a surface mount component in plastic/epoxy package, suitable for applications requiring up to 1A output current at 150°C operating temperature.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

400 V

Rectifier Diodes

YES

TIN LEAD

WRAP AROUND

END

DL4005-13 by Diodes Incorporated

DL4005-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

600 V

Rectifier Diodes

YES

TIN LEAD

WRAP AROUND

END

DL4006-13 by Diodes Incorporated

DL4006-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

800 V

Rectifier Diodes

YES

TIN LEAD

WRAP AROUND

END

DL4007-13 by Diodes Incorporated

DL4007-13

Diodes Incorporated

DL4007-13 by Diodes Inc. is a single rectifier diode with max VF of 1.1V and 1A output current. With 1000V reverse voltage, it's ideal for applications requiring high power efficiency in isolated connections like power supplies and battery chargers.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

1000 V

Rectifier Diodes

YES

TIN LEAD

WRAP AROUND

END

DL4934-13 by Diodes Incorporated

DL4934-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

e0

1

1

2

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

100 V

.2 us

YES

TIN LEAD

WRAP AROUND

END

DL4935-13 by Diodes Incorporated

DL4935-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

e0

1

1

2

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.2 us

YES

TIN LEAD

WRAP AROUND

END

DL4936-13 by Diodes Incorporated

DL4936-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

e0

1

1

2

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

400 V

.2 us

YES

TIN LEAD

WRAP AROUND

END

DL4937-13 by Diodes Incorporated

DL4937-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

e0

1

1

2

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

600 V

.2 us

YES

TIN LEAD

WRAP AROUND

END

LL101A-7 by Diodes Incorporated

LL101A-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

GLASS

ROUND

LONG FORM

.4 W

Not Qualified

60 V

.001 us

YES

SCHOTTKY

WRAP AROUND

END

LL101B-7 by Diodes Incorporated

LL101B-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

GLASS

ROUND

LONG FORM

.4 W

Not Qualified

60 V

.001 us

YES

SCHOTTKY

WRAP AROUND

END

LL101C-7 by Diodes Incorporated

LL101C-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

GLASS

ROUND

LONG FORM

.4 W

Not Qualified

60 V

.001 us

YES

SCHOTTKY

WRAP AROUND

END

LL103A-7 by Diodes Incorporated

LL103A-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

GLASS

ROUND

LONG FORM

.4 W

Not Qualified

40 V

.01 us

YES

SCHOTTKY

WRAP AROUND

END

LL103B-7 by Diodes Incorporated

LL103B-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

GLASS

ROUND

LONG FORM

.4 W

Not Qualified

30 V

.01 us

YES

SCHOTTKY

WRAP AROUND

END

LL103C-7 by Diodes Incorporated

LL103C-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

GLASS

ROUND

LONG FORM

.4 W

Not Qualified

20 V

.01 us

YES

SCHOTTKY

WRAP AROUND

END