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BAS85-M-18

Vishay Intertechnology

BAS85-M-18 by Vishay Intertechnology

Vishay Intertechnology's BAS85-M-18 is a Schottky rectifier diode with 0.24V VF, 0.2A output current, and 30V repetitive peak reverse voltage. Ideal for applications requiring fast switching speeds and low forward voltage drop in compact electronic devices. Its glass package body material and surface mount configuration make it suitable for high-temperature environments up to 125°C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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VNN

France . 11,206 parts In-Stock

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Vyrian

USA . 5,080 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Semicontronic

India . 416 parts In-Stock

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$0.010

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.064

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$0.058

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$0.052

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Aztec Data Supply Inc.

USA . 279 parts In-Stock

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$0.139

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Corohmni

South Africa . 638 parts In-Stock

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Ampacity Inc.

Singapore . 330 parts In-Stock

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$1.010

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AZTECH Wire

Italy . 698 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,051 parts In-Stock

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Continental Prestige Electronics

USA . 3,634 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Get ready to experience top-quality performance with the BAS85-M-18 by Vishay Intertechnology. This diode rectifier offers superior reliability and efficiency, making it a standout choice in the market. Ideal for a variety of applications, this product provides customers with exceptional value and benefits. Whether you're looking for a reliable solution for your electronics project or seeking a durable component for industrial use, the BAS85-M-18 delivers the advantages you need. Choose Vishay Intertechnology for advanced technology and unmatched quality.

Feature Benefit Bullets

Package Body Material: GLASS

Provides durability and protection for the diode, making it suitable for various environments.

Config: SINGLE

Simplifies the circuit design and makes it easier to integrate into different systems.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and facilitating mass production.

Maximum Reverse Recovery Time: 0.005 us

Ensures fast switching speed and efficiency in rectification applications.

Package Shape: ROUND

Facilitates uniform heat dissipation and distribution, enhancing overall performance.

No. of Terminals: 2

Simplifies installation and connection in circuits, reducing complexity.

Package Style (Meter): LONG FORM

Provides a sturdy and standardized form factor for compatibility with various systems.

Maximum Operating Temperature: 125 °C

Allows for reliable operation in a wide range of temperature conditions.

Terminal Position: END

Facilitates easy connections and ensures secure placement within the circuit.

Case Connection: ISOLATED

Prevents interference and ensures proper isolation for safe operation.

Maximum Power Dissipation: 0.2 W

Provides efficient power management and prevents overheating during operation.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, ensuring optimal performance.

Maximum Forward Voltage (VF): 0.24 V

Offers low forward voltage drop, improving energy efficiency during conduction.

Maximum Output Current: 0.2 A

Suitable for low to moderate current applications, ensuring safe and reliable operation.

Technology: SCHOTTKY

Provides fast switching speed and low forward voltage drop, ideal for high-frequency applications.

Terminal Form: WRAP AROUND

Enables easy and secure soldering of the diode onto the PCB, ensuring robust connections.

Maximum Repetitive Peak Reverse Voltage: 30 V

Offers a high reverse voltage rating, ensuring protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 0.6 A

Handles brief high current surges without damage, enhancing reliability in transient conditions.

Diode Element Material: SILICON

Provides high temperature and voltage tolerance, making the diode suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers BAS85-M-18 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JESD-30 Code:

O-LELF-R2

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.2 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAS85-M-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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