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SQ2361AEES-T1_BE3

Vishay Intertechnology

SQ2361AEES-T1_BE3 by Vishay Intertechnology

Vishay Intertechnology's SQ2361AEES-T1_BE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Featuring a built-in diode, it operates in Enhancement Mode with 2.8A ID and 0.17 ohm RDS(on). With AEC-Q101 compliance, it suits automotive electronics requiring high reliability in temperatures ranging from -55 to 175°C.

Median Price

$0.420

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 46,491 parts In-Stock

1+ parts

$0.640

100+ parts

$0.382

1k+ parts

$0.242

10k+ parts

$0.191

46,491

$0.640

$0.382

$0.242

$0.191

TTI

USA . 81,000 parts In-Stock

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$0.199

81,000

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$0.199

Distributors (In-Stock)

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Semtec, LLC

USA . 47,000 parts In-Stock

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47,000

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Vyrian

USA . 43,672 parts In-Stock

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43,672

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 43,813 parts In-Stock

1+ parts

$0.169

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43,813

$0.169

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Corohmni

South Africa . 1,165 parts In-Stock

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$0.306

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$0.306

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Semicontronic

India . 43,579 parts In-Stock

1+ parts

$0.368

100+ parts

$0.359

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$0.357

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43,579

$0.368

$0.359

$0.357

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.958

100+ parts

$0.910

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$0.910

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200

$0.958

$0.910

$0.910

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Aztec Data Supply Inc.

USA . 4,742 parts In-Stock

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$1.610

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$1.610

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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Robosynatics

Brazil . 4,918 parts In-Stock

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4,918

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Lucentia Tech

USA . 4,918 parts In-Stock

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$0.782

1k+ parts

$0.766

10k+ parts

$0.766

4,918

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$0.782

$0.766

$0.766

iodParts Technologies Inc.

India . 2,978 parts In-Stock

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Argo Parts USA

USA . 2,483 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Continental Prestige Electronics

USA . 370 parts In-Stock

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370

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Overview

Discover the SQ2361AEES-T1_BE3 by Vishay Intertechnology, a high-quality P-Channel Small Signal Field Effect Transistor with built-in diode. Perfect for enhancing electronic devices, this transistor offers reliable performance and efficiency. With a maximum power dissipation of 2W and a minimum DS breakdown voltage of 60V, this transistor is ideal for a wide range of applications. Trust Vishay Intertechnology to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the FET, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-Channel FETs offer lower conduction resistance compared to N-Channel FETs, making them suitable for certain applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protection against reverse currents.

Minimum DS Breakdown Voltage: 60 V

This high breakdown voltage ensures the FET can handle higher voltages without damage.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly.

Maximum Drain Current (ID): 2.8 A

With a high maximum drain current, this FET can handle higher power applications with ease.

Maximum Drain-Source On Resistance: 0.17 ohm

Low on-resistance means less power loss and better efficiency in the FET.

Technical Specifications

Small Signal Field Effect Transistors (FET) SQ2361AEES-T1_BE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.8 A

Maximum Drain-Source On Resistance:

.17 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

45 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SQ2361AEES-T1_BE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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