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SM6T7V5CAHE3/5B

Vishay Intertechnology

SM6T7V5CAHE3/5B by Vishay Intertechnology

Vishay Intertechnology's SM6T7V5CAHE3/5B is a single avalanche diode with 600W power dissipation, 7.5V breakdown voltage, and bidirectional polarity. Ideal for transient suppression in applications requiring protection against voltage spikes. Package style: small outline, surface mountable, operating from -65°C to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,868 parts In-Stock

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6,868

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 217 parts In-Stock

1+ parts

$0.066

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217

$0.066

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Aztec Data Supply Inc.

USA . 2,193 parts In-Stock

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$0.116

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$0.116

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Ampacity Inc.

Singapore . 321 parts In-Stock

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$2.010

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321

$2.010

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Semicontronic

India . 281 parts In-Stock

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$2.010

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$1.960

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$1.950

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281

$2.010

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$1.950

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AZTECH Wire

Italy . 688 parts In-Stock

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$5.931

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688

$5.931

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Continental Prestige Electronics

USA . 6,384 parts In-Stock

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Argo Parts USA

USA . 4,052 parts In-Stock

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Bastille Electronics

Australia . 870 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the Vishay Intertechnology SM6T7V5CAHE3/5B. With a maximum non-repetitive peak reverse power dissipation of 600W and a nominal breakdown voltage of 7.5V, this product offers superior quality and performance. Whether you're looking to protect sensitive electronic equipment or ensure stable power supply in industrial applications, this Trans Voltage Suppressor Diode is the perfect solution. Trust Vishay Intertechnology for top-notch products that deliver unrivaled value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and resistant to shocks and vibrations.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

This high power dissipation capability ensures that the device can handle sudden surges in voltage without getting damaged.

Nominal Breakdown Voltage: 7.5 V

The nominal breakdown voltage of 7.5 V indicates the level at which the device will start conducting, protecting the circuit from overvoltage conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this device can perform reliably in high-temperature environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology ensures efficient and effective suppression of voltage spikes, safeguarding the circuit components.

Technical Specifications

Transient Suppression Devices SM6T7V5CAHE3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

7.88 V

Minimum Breakdown Voltage:

7.13 V

Nominal Breakdown Voltage:

7.5 V

Case Connection:

CATHODE

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

6.4 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

SM6T7V5CAHE3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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