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SM6T7V5AHM3_A/I

Vishay Intertechnology

SM6T7V5AHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T7V5AHM3_A/I is a unidirectional avalanche diode with 600W peak power dissipation, 7.51V breakdown voltage, and 500uA max reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 standard compliance and 150°C max operating temp.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,829 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,829

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 450 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

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10k+ parts

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450

$0.010

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AZTECH Wire

Italy . 604 parts In-Stock

1+ parts

$17.860

100+ parts

-

1k+ parts

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10k+ parts

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604

$17.860

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Bastille Electronics

Australia . 200 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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200

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Overview

Looking for reliable transient suppression devices? Look no further than the SM6T7V5AHM3_A/I by Vishay Intertechnology. With a manufacturer known for quality and excellence, this product offers superior protection against voltage spikes in a compact package. Ideal for a wide range of applications, this diode type trans voltage suppressor diode ensures your electronic devices are safeguarded at all times. Trust Vishay Intertechnology to provide you with the best in class protection for your valuable electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection against environmental factors, making the product long-lasting and reliable.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Can handle high surges of power without getting damaged, ensuring the safety of connected devices.

Nominal Breakdown Voltage: 7.51 V

Provides effective protection by conducting excess voltage away from sensitive components when the voltage exceeds this level.

Maximum Clamping Voltage: 14.5 V

Limits the voltage across the protected circuit to this level, preventing damage to connected devices.

Technology: AVALANCHE

Utilizes avalanche breakdown to quickly respond to overvoltage conditions, enhancing the efficiency of the transient suppression.

Technical Specifications

Transient Suppression Devices SM6T7V5AHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

7.88 V

Minimum Breakdown Voltage:

7.13 V

Nominal Breakdown Voltage:

7.51 V

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

6.4 V

Maximum Reverse Current:

500 uA

Reverse Test Voltage:

6.4 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T7V5AHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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