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SM6T7V5A-M3/5B

Vishay Intertechnology

SM6T7V5A-M3/5B by Vishay Intertechnology

Vishay Intertechnology's SM6T7V5A-M3/5B is a single avalanche diode with 600W power dissipation, 7.51V breakdown voltage, and 500uA reverse current. Ideal for transient suppression in applications requiring unidirectional protection against voltage spikes. Package style: small outline, surface mountable, operating from -65°C to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,668 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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9,668

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

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1k+ parts

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450

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 252 parts In-Stock

1+ parts

$1.010

100+ parts

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252

$1.010

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AZTECH Wire

Italy . 532 parts In-Stock

1+ parts

$6.323

100+ parts

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1k+ parts

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10k+ parts

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532

$6.323

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

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300

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Overview

Discover the Vishay Intertechnology SM6T7V5A-M3/5B, a high-quality transient suppression device that offers unparalleled protection against voltage spikes. Manufactured by Vishay Intertechnology, a trusted name in electronic components, this product is designed for various applications where reliable voltage protection is essential. With a maximum power dissipation of 600W and a nominal breakdown voltage of 7.51V, the SM6T7V5A-M3/5B ensures optimal performance and peace of mind. Upgrade your electronics with this innovative solution and experience the benefits of superior quality and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Can handle high power surges effectively, making it suitable for protecting sensitive electronic equipment.

Nominal Breakdown Voltage: 7.51 V

Offers reliable protection by clamping voltage above this level, preventing damage to connected components.

Maximum Power Dissipation: 5 W

Efficiently dissipates excess power during surge events, safeguarding the circuitry from damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes specialized diodes designed for transient voltage suppression, enhancing the device's protective capabilities.

Technical Specifications

Transient Suppression Devices SM6T7V5A-M3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

7.88 V

Minimum Breakdown Voltage:

7.13 V

Nominal Breakdown Voltage:

7.51 V

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Maximum Repetitive Peak Reverse Voltage:

6.4 V

Maximum Reverse Current:

500 uA

Reverse Test Voltage:

6.4 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T7V5A-M3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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