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SM6T68CA-M3/5B

Vishay Intertechnology

SM6T68CA-M3/5B by Vishay Intertechnology

Vishay Intertechnology's SM6T68CA-M3/5B is a single bidirectional avalanche diode with 68V breakdown voltage, 600W peak power dissipation, and 121V clamping voltage. Ideal for transient suppression in applications requiring protection against voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,999 parts In-Stock

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Nova Conductors

Japan . 62 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 161 parts In-Stock

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$0.010

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161

$0.010

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Aztec Data Supply Inc.

USA . 101 parts In-Stock

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$0.015

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Corohmni

South Africa . 243 parts In-Stock

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$0.198

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$0.198

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Semicontronic

India . 269 parts In-Stock

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$3.010

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$2.935

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$2.920

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269

$3.010

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AZTECH Wire

Italy . 525 parts In-Stock

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$11.071

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Argo Parts USA

USA . 4,193 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Continental Prestige Electronics

USA . 100 parts In-Stock

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Overview

Enhance the protection of your electronic devices with Vishay Intertechnology's SM6T68CA-M3/5B Transient Suppression Device. Designed for reliability and performance, this product offers superior quality in safeguarding against voltage spikes and surges. Ideal for a wide range of applications, from consumer electronics to industrial equipment, this device ensures peace of mind by providing excellent protection. Trust Vishay Intertechnology for top-notch solutions that deliver value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, ensuring it can withstand harsh operating conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability allows the device to handle sudden surges in power effectively, protecting connected equipment.

Nominal Breakdown Voltage: 68 V

The specified breakdown voltage level ensures that the device can effectively suppress transient voltages above this threshold, safeguarding sensitive electronics.

Maximum Reverse Current: 1 uA

Low reverse current indicates minimal leakage, which is crucial for maintaining the desired performance of the device over time.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the device to function reliably in various environmental conditions.

Technical Specifications

Transient Suppression Devices SM6T68CA-M3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

71.4 V

Minimum Breakdown Voltage:

64.6 V

Nominal Breakdown Voltage:

68 V

Maximum Clamping Voltage:

121 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Maximum Repetitive Peak Reverse Voltage:

58.1 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

58.1 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T68CA-M3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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