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SM6T39AHE3_A/I

Vishay Intertechnology

SM6T39AHE3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T39AHE3_A/I is a unidirectional avalanche diode with 39.05V breakdown voltage, ideal for transient suppression applications. With a max power dissipation of 600W and clamping voltage of 69.7V, it offers reliable protection against voltage spikes in electronic circuits. This small outline package device operates b/w -65°C to 150°C, making it suitable for various industrial and automotive electronics.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,036 parts In-Stock

1+ parts

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2,036

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 173 parts In-Stock

1+ parts

$0.161

100+ parts

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173

$0.161

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Aztec Data Supply Inc.

USA . 3,774 parts In-Stock

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$0.190

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3,774

$0.190

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Ampacity Inc.

Singapore . 1,554 parts In-Stock

1+ parts

$1.010

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1,554

$1.010

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AZTECH Wire

Italy . 850 parts In-Stock

1+ parts

$7.776

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850

$7.776

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Continental Prestige Electronics

USA . 4,458 parts In-Stock

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4,458

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Argo Parts USA

USA . 2,133 parts In-Stock

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2,133

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Enhance your electronic systems with the SM6T39AHE3_A/I transient suppression device by Vishay Intertechnology. Designed for reliability and performance, this product offers superior protection against voltage spikes and surges in a compact package. Ideal for a wide range of applications, this diode is perfect for safeguarding sensitive components in automotive, industrial, and consumer electronics. Trust Vishay Intertechnology for quality products that deliver peace of mind and ensure the longevity of your valuable devices. Upgrade to the SM6T39AHE3_A/I today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the internal components of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Can handle high power surges effectively and protect the connected equipment.

Nominal Breakdown Voltage: 39.05 V

Provides reliable protection by clamping the voltage at a safe level.

Maximum Operating Temperature: 150 °C

Can operate effectively even in high temperature environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes Transient Voltage Suppressor diodes which are specifically designed for transient voltage protection.

Technical Specifications

Transient Suppression Devices SM6T39AHE3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

41 V

Minimum Breakdown Voltage:

37.1 V

Nominal Breakdown Voltage:

39.05 V

Maximum Clamping Voltage:

69.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

33.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

33.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T39AHE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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