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SM6T27AHE3_A/I

Vishay Intertechnology

SM6T27AHE3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T27AHE3_A/I is a single avalanche diode with 600W power dissipation, 27.05V breakdown voltage, and 1uA reverse current. Ideal for transient suppression in automotive electronics due to its AEC-Q101 compliance and unidirectional polarity.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,087 parts In-Stock

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3,087

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Corohmni

South Africa . 507 parts In-Stock

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$0.072

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507

$0.072

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Aztec Data Supply Inc.

USA . 3,337 parts In-Stock

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$0.123

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$0.123

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Component Stockers USA

USA . 22,599 parts In-Stock

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$1.510

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$1.510

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Ampacity Inc.

Singapore . 646 parts In-Stock

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$3.010

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646

$3.010

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AZTECH Wire

Italy . 817 parts In-Stock

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$11.297

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817

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Argo Parts USA

USA . 1,353 parts In-Stock

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Continental Prestige Electronics

USA . 1,100 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Enhance your electronic devices with the SM6T27AHE3_A/I by Vishay Intertechnology, a top-of-the-line Transient Suppression Device. Designed with quality and precision, this product offers reliable protection against voltage spikes, ensuring the longevity of your equipment. With its advanced technology and high-performance capabilities, this diode is perfect for a wide range of applications. Trust Vishay Intertechnology to provide you with the best solution for your needs, delivering value, benefits, and peace of mind to every customer. Upgrade your devices today with the SM6T27AHE3_A/I and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides a durable and reliable enclosure for the device, ensuring long-term protection against environmental factors.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high power dissipation rating, this device can handle surges and transient events effectively, protecting the connected circuitry from damage.

Nominal Breakdown Voltage: 27.05 V

The nominal breakdown voltage indicates the point at which the device starts to conduct and clamp the voltage, providing effective overvoltage protection for sensitive components.

Minimum Operating Temperature: -65 °C

The wide operating temperature range allows the device to function in extreme environments, making it suitable for a variety of applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a transient voltage suppressor diode ensures fast and effective voltage clamping, providing reliable protection against transient events and surges.

Technical Specifications

Transient Suppression Devices SM6T27AHE3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

28.4 V

Minimum Breakdown Voltage:

25.7 V

Nominal Breakdown Voltage:

27.05 V

Maximum Clamping Voltage:

48.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

23.1 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

23.1 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T27AHE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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