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SM6T200A-M3/52

Vishay Intertechnology

SM6T200A-M3/52 by Vishay Intertechnology

Vishay Intertechnology's SM6T200A-M3/52 is a unidirectional avalanche diode with 200V breakdown voltage, 600W peak power dissipation, and 1uA reverse current. Ideal for transient suppression in applications requiring high clamping voltage protection.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 40 parts In-Stock

1+ parts

$0.036

100+ parts

$0.034

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$0.034

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40

$0.036

$0.034

$0.034

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Distributors (In-Stock)

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Vyrian

USA . 10,537 parts In-Stock

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10,537

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ACDS - Activité Composants Distribution Service

France . 2,250 parts In-Stock

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2,250

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Nova Conductors

Japan . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 40 parts In-Stock

1+ parts

$0.031

100+ parts

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40

$0.031

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Semicontronic

India . 40 parts In-Stock

1+ parts

$0.031

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$0.030

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$0.030

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40

$0.031

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$0.030

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.036

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$0.034

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$0.034

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40

$0.036

$0.034

$0.034

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Corohmni

South Africa . 1,045 parts In-Stock

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$0.082

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1,045

$0.082

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Aztec Data Supply Inc.

USA . 165 parts In-Stock

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$0.177

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165

$0.177

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AZTECH Wire

Italy . 199 parts In-Stock

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$10.154

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199

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Argo Parts USA

USA . 1,853 parts In-Stock

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1,853

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Continental Prestige Electronics

USA . 615 parts In-Stock

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615

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Bastille Electronics

Australia . 50 parts In-Stock

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50

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Overview

Discover the power of protection with the Vishay Intertechnology SM6T200A-M3/52 Transient Suppression Device. This product offers unparalleled quality and reliability, making it the ideal choice for a wide range of applications. With a maximum non-repetitive peak reverse power dissipation of 600W and a nominal breakdown voltage of 200V, this device provides peace of mind when it comes to safeguarding your electronics. Trust Vishay Intertechnology to deliver top-notch products that exceed expectations and provide unmatched value to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device durable and resistant to environmental factors, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

This high level of power dissipation capability allows the device to handle large transient spikes effectively, providing reliable protection for sensitive electronic components.

Nominal Breakdown Voltage: 200 V

The nominal breakdown voltage of 200 V ensures that the device activates at the right threshold to suppress transient overvoltages, safeguarding connected equipment.

Maximum Reverse Current: 1 uA

The low maximum reverse current of 1 uA indicates minimal leakage current, which is crucial for maintaining the integrity of the protected circuit during normal operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this device can withstand high temperature environments without compromising its performance, making it suitable for a wide range of applications.

Technical Specifications

Transient Suppression Devices SM6T200A-M3/52 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

210 V

Minimum Breakdown Voltage:

190 V

Nominal Breakdown Voltage:

200 V

Maximum Clamping Voltage:

353 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Maximum Repetitive Peak Reverse Voltage:

171 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

171 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T200A-M3/52 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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