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SM6T200A-E3/5B

Vishay Intertechnology

SM6T200A-E3/5B by Vishay Intertechnology

Vishay Intertechnology's SM6T200A-E3/5B is a single avalanche diode with 200V breakdown voltage, 600W peak power dissipation, and 353V clamping voltage. Ideal for transient suppression in applications requiring protection against voltage spikes.

Median Price

$0.121

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.121

100+ parts

$0.114

1k+ parts

$0.114

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350

$0.121

$0.114

$0.114

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EBV Elektronik

Germany . 9,600 parts In-Stock

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-

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9,600

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Distributors (In-Stock)

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.182

100+ parts

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450

$0.182

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NAC Semi

USA . 6,400 parts In-Stock

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$0.260

6,400

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$0.260

Vyrian

USA . 4,285 parts In-Stock

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-

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4,285

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 773 parts In-Stock

1+ parts

$0.035

100+ parts

-

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773

$0.035

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Semicontronic

India . 1,669 parts In-Stock

1+ parts

$0.103

100+ parts

$0.100

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$0.100

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1,669

$0.103

$0.100

$0.100

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Aztec Data Supply Inc.

USA . 483 parts In-Stock

1+ parts

$0.107

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483

$0.107

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.121

100+ parts

$0.114

1k+ parts

$0.114

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350

$0.121

$0.114

$0.114

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Continental Prestige Electronics

USA . 4,735 parts In-Stock

1+ parts

$0.182

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-

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$0.178

4,735

$0.182

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$0.178

Argo Parts USA

USA . 2,633 parts In-Stock

1+ parts

$0.182

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$0.177

2,633

$0.182

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$0.177

Ampacity Inc.

Singapore . 1,324 parts In-Stock

1+ parts

$0.224

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1,324

$0.224

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Component Stockers USA

USA . 41,688 parts In-Stock

1+ parts

$1.390

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41,688

$1.390

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AZTECH Wire

Italy . 664 parts In-Stock

1+ parts

$19.448

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664

$19.448

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Eastek

USA . 3,200 parts In-Stock

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3,200

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Overview

Discover the ultimate protection with the Vishay Intertechnology SM6T200A-E3/5B Transient Suppression Device. Trusted for its high-quality manufacturing and reliability, this product offers unmatched defense against voltage spikes in a variety of applications. With a maximum non-repetitive peak reverse power dissipation of 600W and a nominal breakdown voltage of 200V, customers can trust in the durability and effectiveness of this device. Say goodbye to worries about electrical surges and invest in peace of mind with the Vishay Intertechnology SM6T200A-E3/5B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this device lightweight and durable, ideal for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

This high power dissipation capability allows the device to handle transient surges effectively, protecting the connected equipment.

Nominal Breakdown Voltage: 200 V

With a nominal breakdown voltage of 200V, this device can safely clamp voltage spikes to protect sensitive components.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the device can function reliably in various environmental conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology ensures efficient suppression of transient voltage spikes.

Technical Specifications

Transient Suppression Devices SM6T200A-E3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY

Maximum Breakdown Voltage:

210 V

Minimum Breakdown Voltage:

190 V

Nominal Breakdown Voltage:

200 V

Case Connection:

CATHODE

Maximum Clamping Voltage:

353 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

171 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T200A-E3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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