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SM6T12AHE3_A/I

Vishay Intertechnology

SM6T12AHE3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T12AHE3_A/I is a single unidirectional avalanche diode with 12 V breakdown voltage, ideal for transient suppression. With 600 W peak power dissipation and 5 uA reverse current, it operates b/w -65 to 150 °C. Its small outline package makes it suitable for surface mount applications in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,192 parts In-Stock

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2,192

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 690 parts In-Stock

1+ parts

$0.018

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690

$0.018

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Aztec Data Supply Inc.

USA . 4,190 parts In-Stock

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$0.034

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$0.034

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Semicontronic

India . 212 parts In-Stock

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$1.010

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$0.985

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$0.980

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212

$1.010

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$0.980

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Ampacity Inc.

Singapore . 1,192 parts In-Stock

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$2.010

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1,192

$2.010

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AZTECH Wire

Italy . 759 parts In-Stock

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$10.645

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759

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Continental Prestige Electronics

USA . 4,764 parts In-Stock

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Argo Parts USA

USA . 1,698 parts In-Stock

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Bastille Electronics

Australia . 28 parts In-Stock

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Overview

Discover the Vishay Intertechnology SM6T12AHE3_A/I Transient Suppression Device, a high-quality product designed to protect your electronic devices from voltage spikes. With its durable construction and reliable performance, this device is ideal for a wide range of applications. From automotive to industrial systems, this Transient Suppression Device offers customers peace of mind knowing their equipment is safeguarded. Trust Vishay Intertechnology for top-notch quality and superior protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the device lightweight and durable, suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high peak power dissipation capacity of 600 W, this device can effectively protect electronic circuits from transient overvoltage events.

Nominal Breakdown Voltage: 12 V

The nominal breakdown voltage of 12 V ensures reliable protection against overvoltage spikes and surges within the specified voltage range.

Maximum Operating Temperature: 150 °C

The device can operate at a high temperature of up to 150°C, making it suitable for use in a wide range of environmental conditions.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that the device meets stringent quality and reliability requirements for automotive applications.

Technical Specifications

Transient Suppression Devices SM6T12AHE3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

12.6 V

Minimum Breakdown Voltage:

11.4 V

Nominal Breakdown Voltage:

12 V

Maximum Clamping Voltage:

21.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

10.2 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

10.2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T12AHE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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