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SI4804DY

Vishay Intertechnology

SI4804DY by Vishay Intertechnology

Vishay Intertechnology's SI4804DY is a N-CHANNEL FET with 30V DS Breakdown Voltage, 5.7A ID, and 0.022 ohm RDS(on). Ideal for applications requiring high drain current capability in compact designs due to its small outline package style and gull wing terminals.

Median Price

$1.150

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 1,255 parts In-Stock

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$1.150

100+ parts

$0.870

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$0.750

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Vyrian

USA . 1,356 parts In-Stock

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Semi Source

USA . 893 parts In-Stock

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Cyclops Electronics Ltd

UK . 158 parts In-Stock

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Electronics Depot

USA . 150 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 120 parts In-Stock

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Nova Conductors

Japan . 84 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 207 parts In-Stock

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$1.609

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Aztec Data Supply Inc.

USA . 293 parts In-Stock

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$1.750

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293

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AZTECH Wire

Italy . 450 parts In-Stock

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$11.336

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Argo Parts USA

USA . 4,799 parts In-Stock

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Bastille Electronics

Australia . 3,486 parts In-Stock

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Continental Prestige Electronics

USA . 3,068 parts In-Stock

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Kepictronics

USA . 158 parts In-Stock

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Authorized Procurement Solutions

USA . 60 parts In-Stock

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GreenTree Electronics

Israel . 60 parts In-Stock

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Overview

Unleash the power of innovation with the SI4804DY by Vishay Intertechnology, a top-tier manufacturer known for delivering high-quality components. This N-CHANNEL small signal Field Effect Transistor (FET) boasts a unique configuration of two elements with built-in diode, offering enhanced performance and reliability for a wide range of applications. With its low on-resistance and high drain current capability, this FET is ideal for amplifiers, switches, and power management systems. Elevate your projects with the superior value and efficiency that the SI4804DY brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for electronic applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and efficiency compared to P-channel transistors, making this a preferred choice for many electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for versatile use in different circuit designs, offering additional functionality with the built-in diode.

Surface Mount: YES

Being surface mount compatible makes installation easier and more convenient for compact electronic devices.

Minimum DS Breakdown Voltage: 30 V

The high breakdown voltage ensures reliable operation and protection against voltage spikes, making it suitable for wide range of applications.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to handle and mount in a variety of electronic devices and circuit boards.

Terminal Form: GULL WING

The gull wing terminal form offers secure connections and easy soldering for efficient assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control and efficiency in electronic circuits, making them a popular choice for various applications.

No. of Elements: 2

Having 2 elements allows for more versatility in circuit designs, enabling complex functions and performance.

No. of Terminals: 8

The 8 terminals provide flexibility for connections and ensure connectivity with other components in the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact design of electronic systems.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides efficient performance and reliable operation in various electronic applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability and durability, making them a preferred choice in electronic circuits.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers good conductivity and solderability, ensuring stable and reliable connections.

Maximum Drain Current (ID): 5.7 A

The high maximum drain current capability allows for handling higher power loads, making it suitable for demanding applications.

Maximum Drain-Source On Resistance: 0.022 ohm

A low drain-source on resistance value ensures efficient power handling and minimal losses in the circuit.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and reliable connections for improved performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4804DY attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

5.7 A

Maximum Drain-Source On Resistance:

.022 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SI4804DY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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