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SI4896DY-T1-GE3

Vishay Intertechnology

SI4896DY-T1-GE3 by Vishay Intertechnology

SI4896DY-T1-GE3 by Vishay Intertechnology is a N-channel FET with 80V DS breakdown voltage and 6.7A max drain current. Ideal for small signal applications, it features a single configuration with built-in diode in a rectangular package suitable for surface mount technology. Operating in enhancement mode, this MOSFET has a max power dissipation of 3.1W and can withstand temperatures up to 150°C during operation.

Median Price

$1.258

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 15,999 parts In-Stock

1+ parts

$3.400

100+ parts

$2.490

1k+ parts

$1.700

10k+ parts

$1.660

15,999

$3.400

$2.490

$1.700

$1.660

DigiKey

USA . 3,187 parts In-Stock

1+ parts

$3.520

100+ parts

$1.602

1k+ parts

$1.392

10k+ parts

$1.137

3,187

$3.520

$1.602

$1.392

$1.137

Mouser Electronics

USA . 139 parts In-Stock

1+ parts

$3.520

100+ parts

$1.610

1k+ parts

$1.220

10k+ parts

$1.040

139

$3.520

$1.610

$1.220

$1.040

TTI

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.710

25,000

-

-

-

$0.710

Farnell

UK . 16,670 parts In-Stock

1+ parts

-

100+ parts

$0.840

1k+ parts

-

10k+ parts

-

16,670

-

$0.840

-

-

Element14

Singapore . 16,670 parts In-Stock

1+ parts

-

100+ parts

$1.830

1k+ parts

$1.600

10k+ parts

-

16,670

-

$1.830

$1.600

-

Future Electronics

Canada . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.610

7,500

-

-

-

$1.610

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.907

2,500

-

-

-

$0.907

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.907

2,500

-

-

-

$0.907

Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.528

2,500

-

-

-

$0.528

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.637

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$1.637

-

-

-

IBS Electronics

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$2.258

25,000

-

-

-

$2.258

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$3.580

20,000

-

-

-

$3.580

Vyrian

USA . 10,946 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10,946

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 10,870 parts In-Stock

1+ parts

$0.449

100+ parts

$0.438

1k+ parts

$0.436

10k+ parts

-

10,870

$0.449

$0.438

$0.436

-

Ampacity Inc.

Singapore . 9,908 parts In-Stock

1+ parts

$0.449

100+ parts

-

1k+ parts

-

10k+ parts

-

9,908

$0.449

-

-

-

Aztec Data Supply Inc.

USA . 68 parts In-Stock

1+ parts

$0.820

100+ parts

-

1k+ parts

-

10k+ parts

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68

$0.820

-

-

-

Corohmni

South Africa . 489 parts In-Stock

1+ parts

$1.279

100+ parts

-

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10k+ parts

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489

$1.279

-

-

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Argo Parts USA

USA . 2,445 parts In-Stock

1+ parts

$1.572

100+ parts

-

1k+ parts

-

10k+ parts

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2,445

$1.572

-

-

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Continental Prestige Electronics

USA . 2,410 parts In-Stock

1+ parts

$1.572

100+ parts

-

1k+ parts

-

10k+ parts

$1.541

2,410

$1.572

-

-

$1.541

Microchip USA

USA . 9,673 parts In-Stock

1+ parts

$5.798

100+ parts

-

1k+ parts

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10k+ parts

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9,673

$5.798

-

-

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iodParts Technologies Inc.

India . 79,999 parts In-Stock

1+ parts

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100+ parts

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79,999

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RC Electronics

USA . 37,567 parts In-Stock

1+ parts

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37,567

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Perfect Parts

USA . 2,800 parts In-Stock

1+ parts

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2,800

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

1+ parts

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100+ parts

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2,700

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Overview

Discover the exceptional quality and performance of the SI4896DY-T1-GE3 by Vishay Intertechnology, a leading manufacturer in the field of Small Signal Field Effect Transistors. This N-channel transistor with a built-in diode offers reliable operation and high efficiency in a compact package. Ideal for a wide range of applications, this enhancement mode transistor provides a maximum drain current of 6.7 A and a low drain-source on resistance of 0.0165 ohm, ensuring optimal functionality in diverse electronic systems. Upgrade your designs with the unmatched value and benefits of the SI4896DY-T1-GE3 for superior performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON-resistance and higher current handling capabilities, making them efficient for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection, ensuring the safety of the circuit and components.

Surface Mount: YES

Easy to integrate into circuit boards, saving space and enabling mass production.

Minimum DS Breakdown Voltage: 80 V

Can handle high voltage applications, providing flexibility for various electronic designs.

Maximum Drain Current (Abs) (ID): 6.7 A

High current handling capabilities enable the FET to power demanding components or circuits.

Maximum Power Dissipation (Abs): 3.1 W

Efficient heat dissipation allows the FET to operate at high power levels without overheating.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Drain-Source On Resistance: 0.0165 ohm

Low ON resistance ensures minimal power loss and high efficiency in circuit operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers good performance characteristics, such as fast switching speeds and low gate capacitance.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4896DY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (Abs) (ID):

6.7 A

Maximum Drain Current (ID):

6.7 A

Maximum Drain-Source On Resistance:

.0165 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SI4896DY-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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