Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SI4816BDY-T1-GE3 by Vishay Intertechnology is a N-channel FET with 30V DS breakdown voltage and 8.2A max drain current. Ideal for small signal applications, it features a series connected configuration with built-in diode elements. Operating in enhancement mode, this transistor has a max power dissipation of 2.4W and can withstand temperatures from -55 to 150°C.
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This material provides durability and protection, making the product suitable for various environments.
N-channel transistors offer high performance and efficiency, making them ideal for many applications.
This configuration allows for versatile usage and improved functionality in circuit design.
The surface mount feature makes for easy installation and saves space on the circuit board.
With a high breakdown voltage, this product offers reliable operation and protection against voltage spikes.
The rectangular shape provides easy handling and placement on the circuit board.
The gull wing terminals offer secure connections and high mechanical strength.
Enhancement mode operation provides precise control and efficient performance in various applications.
Having two elements allows for increased functionality and versatility in circuit design.
The high maximum drain current rating allows for handling of demanding loads and high-power applications.
With eight terminals, this product offers various connection options for flexible circuit design.
The high power dissipation rating ensures reliable performance under demanding conditions.
The small outline package saves space and allows for compact designs in electronic applications.
MOSFET technology provides high switching speeds and low power consumption, making it a versatile choice for many applications.
With a high maximum operating temperature, this product can withstand elevated temperatures without performance loss.
Silicon material offers high performance and reliability, making this product a durable choice for electronic circuits.
The low minimum operating temperature ensures reliable performance even in extreme cold conditions.
The matte tin finish provides corrosion resistance and ensures secure connections for long-term use.
The maximum drain current rating of 5.8 A allows for handling of moderate to high current loads.
With low on-resistance, this product offers efficient power management and reduced heat dissipation.
Dual terminal position offers flexibility in connection options and facilitates circuit design.
With a maximum time at peak reflow temperature of 30 seconds, this product offers reliable soldering performance.
The peak reflow temperature of 260°C ensures proper soldering and reliable connections for the product.
Small Signal Field Effect Transistors (FET) SI4816BDY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
SI4816BDY-T1-GE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
2N7002
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
MMBT3906LT1G
Onsemi
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
M39029/56-351
Itt Cannon
CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;
2N2222A
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
ROHM
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Micro Commercial Components
Bytesonic Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
Semiconductor Technology
Grande Electronics
LM555CMX
Texas Instruments
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
BAV99
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Infinex
DS18B20U+
Analog Devices
DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
LL4148
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM2931AZ-5.0RAG
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
Rectron
STM32H743XIH6
STMicroelectronics
STM32H743XIH6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 36-Ch 16-Bit ADC, and 2-Ch 12-Bit DAC. It operates at up to 48 MHz, has 1085440 bytes of RAM, and offers connectivity options like CAN, I2C, USB. Ideal for industrial applications requiring high-performance processing and extensive peripheral support.
NC7WZ17P6X
The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 3.1A Drain Current, and 0.112 ohm On Resistance. With ENHANCEMENT MODE operation and GULL WING terminals, it operates b/w -55 to 150 °C in SMALL OUTLINE package style.
BSS138TA
BSS138TA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. It has a 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
IRLML6402TRPBF-1
Infineon Technologies
Infineon's IRLML6402TRPBF-1 is a P-CHANNEL FET with 4.3A max drain current and 1.3W power dissipation. Ideal for surface mount applications, it operates up to 150°C, making it suitable for various electronic devices requiring high-performance transistors.
BS170
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Package Style (Meter): CYLINDRICAL; Terminal Position: BOTTOM;
BSS138
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
FDN357N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
BSS138-TP
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
ZXM61N03FTA
ZXM61N03FTA by Diodes Inc. is a N-CHANNEL FET with 30V DS breakdown voltage, 1.4A max drain current, and 0.22 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. It comes in a small outline package with gull wing terminals for surface mount assembly.
ZVP3310FTA
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3;
2N7000-D74Z
2N7000-D74Z by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.2A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. The transistor features a built-in diode, cylindrical package style, and metal-oxide semiconductor technology.
NX3008PBK,215
NXP Semiconductors
NX3008PBK,215 by NXP Semiconductors is a P-CHANNEL FET with max drain current of 0.23A and power dissipation of 0.42W. Ideal for applications requiring surface mount technology, it operates at up to 150°C making it suitable for various electronic devices.
BSS123
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Time At Peak Reflow Temperature (s): 40;
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
FDS6679AZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; JESD-609 Code: e3;
2N7000
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
BSS84AKV,115
Nexperia
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 6; Transistor Application: SWITCHING;
FDG6303N
FDG6303N by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and 0.45 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with max ID of 0.5A and 25V DS breakdown voltage. This small outline transistor has a max temp of 150°C and -55°C min temp.
BSS138G
Changzhou Galaxy Century Microelectronics
BSS138G by Changzhou Galaxy Century Microelectronics is a N-CHANNEL FET with 50V DS Breakdown Voltage. It's used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max Drain Current of 0.22A. The transistor features a PLASTIC/EPOXY package, GULL WING terminals, and can withstand temperatures from -55 to 150 °C.
FDN337N_NL
Fairchild Semiconductor's FDN337N_NL is a N-CHANNEL FET for SWITCHING applications. It has a 30V DS Breakdown Voltage, 2A Drain Current, and 0.065 ohm On Resistance. With ENHANCEMENT MODE operation, it comes in a SMALL OUTLINE package with GULL WING terminals.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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SI4816BDY-T1-E3
Vishay Siliconix
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
SI4816BDY-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a Max Drain Current of 5.8A and Min DS Breakdown Voltage of 30V. Ideal for applications requiring high drain current in small outline packages, operating b/w -55 to 150°C.
SI4816BDY-T1-GE3
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: MATTE TIN; Qualification: Not Qualified; Moisture Sensitivity Level (MSL): 1;
SI4850EY-T1-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.3 W; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
SI4850EY-T1-GE3
SI4850EY-T1-GE3 by Vishay Intertechnology is a N-channel FET with 60V DS breakdown voltage and 6A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.022 ohm on-resistance. The small outline package features Gull Wing terminals and can handle up to 175°C operating temperature.
SI4840BDY-T1-E3
SI4840BDY-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 40V DS Breakdown Voltage, 19A Drain Current, and 0.009 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 6W.
SI4848DY-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e3; Transistor Element Material: SILICON;
SI4804DY
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 5.7 A; Transistor Element Material: SILICON;
Vishay Intertechnology's SI4804DY is a N-CHANNEL FET with 30V DS Breakdown Voltage, 5.7A ID, and 0.022 ohm RDS(on). Ideal for applications requiring high drain current capability in compact designs due to its small outline package style and gull wing terminals.
SI4848DY-T1-E3
Vishay Intertechnology's SI4848DY-T1-E3 is a N-CHANNEL FET with 150V DS Breakdown Voltage, 2.7A Drain Current, and 0.085 ohm On Resistance. Ideal for applications requiring high power dissipation up to 3W in small outline packages, operating b/w -55°C to 150°C.
SI4840BDY-T1-GE3
SI4840BDY-T1-GE3 by Vishay Intertechnology is a N-channel FET with 40V DS breakdown voltage and 19A max drain current. Ideal for switching applications, it operates in enhancement mode with a built-in diode. The transistor features a small outline package, -55 to 150°C operating temperature range, and 0.009 ohm max drain-source resistance.
SI4804CDY-T1-GE3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; JESD-609 Code: e3; Terminal Position: DUAL;
SI4896DY-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
SI4896DY-T1-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Terminal Position: DUAL; Moisture Sensitivity Level (MSL): 1;
SI4835BDY
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .018 ohm; Terminal Finish: TIN LEAD;
SI4850EY-T1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Drain Current (ID): 6 A;
SI4850EY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
SI4848ADY-T1-GE3
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SI4850EY-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
SI4816BDY-E3
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 30 V;
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