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2N5640

Vishay Intertechnology

2N5640 by Vishay Intertechnology

Vishay Intertechnology's 2N5640 is a N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it features DEPLETION MODE operation and 100 ohm Drain-Source On Resistance. With a Max Operating Temperature of 135°C, this transistor has a PLASTIC/EPOXY body in ROUND shape.

Median Price

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Lifecycle Status

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13

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1k+

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PUI

USA . 8,480 parts In-Stock

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Anansix

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Electronic Expediters

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MISTER SPROCKETS

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Digiode

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565

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Vyrian

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Lakeview Electronics

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PAR Electronics

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Nova Conductors

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Prism Electronics

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ECAB

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LittleDiode

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TANS Electronics

Latvia . 7,525 parts In-Stock

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RGB Technical Solutions

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Problanco Electronics

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Argo Parts USA

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Continental Prestige Electronics

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Kulean Microsystems

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Glotronic Ltd.

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SupplyDigital Components

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Corphita

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Supply Digital

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UHIMA Technologies

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Corohmni

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Aranea Global

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Overview

Discover the power of the 2N5640 by Vishay Intertechnology, a top-notch Small Signal Field Effect Transistor designed for various switching applications. With a reliable manufacturer like Vishay Intertechnology behind it, this N-CHANNEL transistor offers superior quality and performance. Its low drain-source on resistance and high breakdown voltage ensure efficiency and durability, making it a valuable asset for your electronic projects. Upgrade your circuit designs with the 2N5640 and experience enhanced reliability and functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically have better performance characteristics and lower ON-resistance compared to P-CHANNEL transistors.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to integrate into a variety of electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient performance.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages without getting damaged.

Package Shape: ROUND

The ROUND shape allows for easy mounting and integration into circular or cylindrical designs.

Terminal Form: THROUGH-HOLE

THROUGH-HOLE terminals provide secure and reliable connections, making installation and soldering easier.

Operating Mode: DEPLETION MODE

DEPLETION MODE operation allows for better control and regulation of current flow in the circuit.

No. of Terminals: 3

With 3 terminals, this transistor offers versatile connectivity options for different circuit configurations.

Package Style (Meter): CYLINDRICAL

The CYLINDRICAL package style is compact and space-efficient, making it ideal for small electronic devices.

Field Effect Transistor Technology: JUNCTION

JUNCTION technology provides better performance and reliability compared to other FET technologies.

Maximum Operating Temperature: 135 °C

With a maximum operating temperature of 135°C, this transistor can withstand high-temperature environments.

Transistor Element Material: SILICON

SILICON is a common and reliable material for transistor elements, ensuring stable and consistent performance.

Maximum Drain-Source On Resistance: 100 ohm

With a low ON resistance of 100 ohms, this transistor offers efficient current flow and minimal power loss.

Terminal Position: BOTTOM

The BOTTOM terminal position allows for easy mounting and soldering on circuit boards.

Maximum Feedback Capacitance (Crss): 4 pF

With a low feedback capacitance of 4 pF, this transistor minimizes signal distortion and improves overall circuit performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N5640 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

4 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

135 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N5640 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-070-6581, 5961010706581

NIIN

010706581

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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