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2N5638RLRA

Onsemi

2N5638RLRA by Onsemi

2N5638RLRA by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a Max Power Dissipation of 0.31W and Max Drain-Source On Resistance of 30Ω. Operating in DEPLETION MODE, it can handle up to 150 °C temperature making it suitable for various electronic circuits.

Median Price

$0.130

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Master Electronics

USA . 5,918 parts In-Stock

1+ parts

$0.085

100+ parts

$0.083

1k+ parts

$0.078

10k+ parts

$0.074

5,918

$0.085

$0.083

$0.078

$0.074

Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$1.759

100+ parts

$1.601

1k+ parts

$1.442

10k+ parts

-

2,500

$1.759

$1.601

$1.442

-

Verical

USA . 5,745 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.101

10k+ parts

-

5,745

-

-

$0.101

-

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

4,000

-

$0.159

$0.132

$0.117

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 5,918 parts In-Stock

1+ parts

$0.119

100+ parts

$0.116

1k+ parts

$0.109

10k+ parts

$0.104

5,918

$0.119

$0.116

$0.109

$0.104

Digiode

USA . 1,620 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

-

10k+ parts

-

1,620

$0.124

-

-

-

Vyrian

USA . 1,246 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

-

1,246

$0.130

-

-

-

DigiKey Marketplace

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 119 parts In-Stock

1+ parts

$0.117

100+ parts

-

1k+ parts

-

10k+ parts

-

119

$0.117

-

-

-

Corohmni

South Africa . 237 parts In-Stock

1+ parts

$0.322

100+ parts

-

1k+ parts

-

10k+ parts

-

237

$0.322

-

-

-

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.759

100+ parts

$1.601

1k+ parts

$1.442

10k+ parts

-

2,500

$1.759

$1.601

$1.442

-

Native Components

USA . 922 parts In-Stock

1+ parts

$67.200

100+ parts

-

1k+ parts

-

10k+ parts

$64.512

922

$67.200

-

-

$64.512

Northwest PG Solutions

USA . 2,075 parts In-Stock

1+ parts

$73.920

100+ parts

-

1k+ parts

-

10k+ parts

-

2,075

$73.920

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 7,569 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,569

-

-

-

-

Kulean Microsystems

USA . 5,981 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,981

-

-

-

-

Problanco Electronics

Mexico . 4,410 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,410

-

-

-

-

Continental Prestige Electronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.125

10k+ parts

-

4,000

-

-

$0.125

-

Glotronic Ltd.

UK . 2,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,780

-

-

-

-

SupplyDigital Components

Austria . 1,001 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,001

-

-

-

-

TANS Electronics

Latvia . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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750

-

-

-

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UHIMA Technologies

Türkiye . 170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

170

-

-

-

-

Overview

Enhance your electronic projects with the 2N5638RLRA by Onsemi, a top-quality small signal field effect transistor that guarantees reliable performance. Manufactured by Onsemi, a trusted name in the industry, this N-channel FET is perfect for switching applications with its depletion mode operation. With a maximum power dissipation of 0.31W and a minimum DS breakdown voltage of 30V, this transistor offers outstanding value and benefits to customers looking for high-quality components. Upgrade your designs with the 2N5638RLRA and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Enhances efficiency and performance in switching applications.

Configuration: SINGLE

Simplified design and ease of use for circuit integration.

Minimum DS Breakdown Voltage: 30 V

Ensures reliability and stability in operation.

Package Shape: ROUND

Space-saving and compact design for easier placement on circuit boards.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection in electronic circuits.

Operating Mode: DEPLETION MODE

Offers flexibility in controlling the flow of current.

No. of Terminals: 3

Simplified connectivity and integration into circuits.

Maximum Power Dissipation (Abs): 0.31 W

Efficient power handling capability for various applications.

Package Style (Meter): CYLINDRICAL

Provides a compact and efficient form factor for the device.

Field Effect Transistor Technology: JUNCTION

Ensures high performance and efficiency in operation.

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of temperature environments.

Transistor Element Material: SILICON

Known for its reliability and durability in electronic components.

Terminal Finish: TIN LEAD

Enhanced solderability and connectivity for improved performance.

Maximum Drain-Source On Resistance: 30 ohm

Low on-resistance for efficient switching and performance.

Terminal Position: BOTTOM

Facilitates easy integration into circuits and connections.

Peak Reflow Temperature °C: 235

High-temperature tolerance for soldering processes.

Maximum Feedback Capacitance (Crss): 4 pF

Low feedback capacitance for improved stability and performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N5638RLRA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

30 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

4 pF

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N5638RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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