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THGBM5G8A4JBAIR

Toshiba

THGBM5G8A4JBAIR by Toshiba

The Toshiba THGBM5G8A4JBAIR is a NAND flash memory with 32GX8 organization, 274877906944 bit memory density, and 34359738368 words capacity. It operates b/w -25 to 85 °C and requires a supply voltage of 2.7-3.6 V. Ideal for applications requiring high-speed data storage in compact devices like smartphones and tablets.

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 67 parts In-Stock

1+ parts

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67

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 994 parts In-Stock

1+ parts

$8.000

100+ parts

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1k+ parts

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994

$8.000

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Argo Parts USA

USA . 4,971 parts In-Stock

1+ parts

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4,971

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Continental Prestige Electronics

USA . 3,660 parts In-Stock

1+ parts

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3,660

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Kepictronics

USA . 846 parts In-Stock

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846

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Overview

Unlock endless possibilities with the THGBM5G8A4JBAIR by Toshiba. Crafted with precision and expertise, this flash memory device is designed to elevate your technology experience. Whether you're storing important data, running complex applications, or enhancing your device's performance, this product delivers unparalleled speed and reliability. Say goodbye to storage limitations and hello to seamless functionality. Upgrade to Toshiba's innovative flash memory solution for a smarter, faster, and more efficient digital experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and helps protect the flash memory from external elements, making it a reliable choice.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration of the flash memory into various electronic devices, saving space and simplifying assembly processes.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory can withstand harsh environmental conditions, making it suitable for a wide range of applications.

Organization: 32GX8

The 32GX8 organization allows for efficient data storage and retrieval, making the flash memory suitable for high-performance applications where speed and reliability are key.

Minimum Operating Temperature: -25 °C

The flash memory's low minimum operating temperature of -25°C ensures reliable performance even in cold environments, increasing its versatility.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage requirement of 2.7V makes the flash memory energy-efficient and compatible with a wide range of power sources.

Type: NAND TYPE

Being a NAND type flash memory, it offers fast read and write speeds, high storage capacity, and durability, making it ideal for use in various electronic devices.

Technology: CMOS

The CMOS technology used in this flash memory ensures low power consumption, high speed, and reliability, making it a cost-effective and efficient solution.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V provides flexibility in powering the flash memory, allowing it to be used in a variety of systems without compatibility issues.

Memory Density: 274877906944 bit

With a high memory density of 274877906944 bits, this flash memory can store large amounts of data in a compact form factor, making it suitable for data-intensive applications.

Technical Specifications

Flash Memory THGBM5G8A4JBAIR attributes and parameters. Explore more Flash Memory devices from Toshiba

Specs

JESD-30 Code:

R-PBGA-B153

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

34359738368 words

No. of Words Code:

32G

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Programming Voltage (V):

2.7

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Position:

BOTTOM

Type:

NAND TYPE

Trade Compliance

THGBM5G8A4JBAIR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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