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GT40Q321

Toshiba

GT40Q321 by Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Collector Current (IC): 42 A; Package Shape: RECTANGULAR;

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 124 parts In-Stock

1+ parts

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124

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 70 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

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10k+ parts

$0.134

70

$0.139

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$0.134

Northwest PG Solutions

USA . 2,010 parts In-Stock

1+ parts

$0.153

100+ parts

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$0.135

2,010

$0.153

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$0.135

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.848

100+ parts

$1.682

1k+ parts

$1.515

10k+ parts

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1,000

$1.848

$1.682

$1.515

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GreenTree Electronics

Israel . 40,000 parts In-Stock

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40,000

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Kepictronics

USA . 12,000 parts In-Stock

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12,000

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S.R.D Solutions

India . 500 parts In-Stock

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500

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) GT40Q321 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Toshiba

Specs

Additional Features:

HIGH SPEED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Fall Time (tf):

720 ns

Maximum Gate-Emitter Voltage:

25 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

570 ns

Nominal Turn On Time (ton):

250 ns

Trade Compliance

GT40Q321 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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