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UCD7201RSAT

Texas Instruments

UCD7201RSAT by Texas Instruments

UCD7201RSAT by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating at 12V. It has a turn-on/off time of 0.035us and supports a max supply voltage of 15V. Ideal for industrial applications requiring precise control over power supplies in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,618 parts In-Stock

1+ parts

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3,618

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Digiode

USA . 61 parts In-Stock

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61

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 762 parts In-Stock

1+ parts

$9.942

100+ parts

-

1k+ parts

$10.507

10k+ parts

-

762

$9.942

-

$10.507

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DigiPath Technology Company

USA . 2,290 parts In-Stock

1+ parts

$10.948

100+ parts

$10.072

1k+ parts

-

10k+ parts

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2,290

$10.948

$10.072

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ChromeModa Solutions

Germany . 3,443 parts In-Stock

1+ parts

$11.171

100+ parts

$9.160

1k+ parts

-

10k+ parts

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3,443

$11.171

$9.160

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IDEA Electronic Components Group

UK . 1,710 parts In-Stock

1+ parts

$11.171

100+ parts

$10.612

1k+ parts

$10.054

10k+ parts

-

1,710

$11.171

$10.612

$10.054

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AZTECH Wire

Italy . 225 parts In-Stock

1+ parts

$13.450

100+ parts

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225

$13.450

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One Stop Electronics

USA . 324 parts In-Stock

1+ parts

$45.500

100+ parts

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324

$45.500

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Corphita

USA . 3,855 parts In-Stock

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3,855

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Overview

Unlock the potential of your power management system with the UCD7201RSAT by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality MOSFET Gate Drivers that provide unmatched reliability and performance. With its advanced technology and innovative design, this product offers customers a versatile solution for a wide range of applications. Experience the value and benefits of seamless power control with the UCD7201RSAT, designed to optimize efficiency and enhance system functionality. Elevate your projects with Texas Instruments and take your power management to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and makes the product durable and reliable.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving space and enabling automated assembly.

Maximum Supply Voltage: 15 V

Can support a wide range of operating voltage, making it versatile for different applications.

No. of Functions: 2

Provides flexibility in controlling multiple MOSFETs efficiently.

Package Shape: SQUARE

Allows for efficient use of space on the PCB.

Minimum Operating Temperature: -40 °C

Can operate in low-temperature environments, making it suitable for various industrial applications.

Maximum Seated Height: 1 mm

Low profile design allows for compact and efficient PCB layout.

Nominal Output Peak Current Limit: 4 A

Can handle high peak currents, making it suitable for driving power MOSFETs.

Turn-on Time: 0.035 us

Fast turn-on time enables quick switching of MOSFETs, improving efficiency.

Technical Specifications

MOSFET Gate Drivers UCD7201RSAT attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

S-PQCC-N16

Length:

4 mm

No. of Functions:

2

No. of Terminals:

16

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.16SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Turn-off Time:

.035 us

Turn-on Time:

.035 us

Width:

4 mm

Trade Compliance

UCD7201RSAT Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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