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UCD7100APWP

Texas Instruments

UCD7100APWP by Texas Instruments

UCD7100APWP by Texas Instruments is a MOSFET gate driver with 14 terminals, operating voltage range of 4.25V to 14.5V, and output current up to 4A. It features a small outline package suitable for applications requiring fast turn-on/off times and true output polarity, such as power electronics and motor control systems.

Median Price

$23.080

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 2,675 parts In-Stock

1+ parts

$15.936

100+ parts

$13.920

1k+ parts

$9.600

10k+ parts

-

2,675

$15.936

$13.920

$9.600

-

Mouser Electronics

USA . 176 parts In-Stock

1+ parts

$23.080

100+ parts

$16.570

1k+ parts

-

10k+ parts

-

176

$23.080

$16.570

-

-

DigiKey

USA . 83 parts In-Stock

1+ parts

$23.080

100+ parts

-

1k+ parts

-

10k+ parts

-

83

$23.080

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$14.755

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$14.755

-

-

-

Digiode

USA . 1,791 parts In-Stock

1+ parts

$15.139

100+ parts

-

1k+ parts

-

10k+ parts

-

1,791

$15.139

-

-

-

Vyrian

USA . 3,354 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,354

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 755 parts In-Stock

1+ parts

$2.858

100+ parts

-

1k+ parts

$3.349

10k+ parts

-

755

$2.858

-

$3.349

-

ChromeModa Solutions

Germany . 5,376 parts In-Stock

1+ parts

$3.211

100+ parts

$2.633

1k+ parts

-

10k+ parts

-

5,376

$3.211

$2.633

-

-

IDEA Electronic Components Group

UK . 320 parts In-Stock

1+ parts

$3.211

100+ parts

-

1k+ parts

$2.890

10k+ parts

-

320

$3.211

-

$2.890

-

Corohmni

South Africa . 143 parts In-Stock

1+ parts

$5.785

100+ parts

-

1k+ parts

-

10k+ parts

-

143

$5.785

-

-

-

Ampacity Inc.

Singapore . 559 parts In-Stock

1+ parts

$13.550

100+ parts

-

1k+ parts

-

10k+ parts

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559

$13.550

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-

-

Corphita

USA . 853 parts In-Stock

1+ parts

$14.342

100+ parts

-

1k+ parts

-

10k+ parts

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853

$14.342

-

-

-

Continental Prestige Electronics

USA . 5,180 parts In-Stock

1+ parts

$14.755

100+ parts

-

1k+ parts

-

10k+ parts

$14.460

5,180

$14.755

-

-

$14.460

Netroflash

USA . 100 parts In-Stock

1+ parts

$14.755

100+ parts

$14.460

1k+ parts

$14.017

10k+ parts

$13.722

100

$14.755

$14.460

$14.017

$13.722

DigiPath Technology Company

USA . 2,334 parts In-Stock

1+ parts

-

100+ parts

$2.895

1k+ parts

-

10k+ parts

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2,334

-

$2.895

-

-

Argo Parts USA

USA . 1,458 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,458

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Overview

Experience superior performance and reliability with the UCD7100APWP MOSFET Gate Driver by Texas Instruments. Designed with precision and quality in mind, this versatile component offers unmatched value for a wide range of applications. Trust in the expertise of Texas Instruments to provide cutting-edge technology that ensures optimal functionality and efficiency. Elevate your projects with the UCD7100APWP and enjoy seamless operation, enhanced capabilities, and exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the gate driver.

Surface Mount: YES

Allows for easy and convenient installation on a circuit board.

Maximum Supply Voltage: 14.5 V

Can handle a relatively high supply voltage for powering the MOSFETs.

Minimum Supply Voltage: 4.25 V

Can operate effectively even with a low supply voltage.

Maximum Operating Temperature: 105 °C

Can withstand high temperature environments without malfunctioning.

Minimum Operating Temperature: -40 °C

Can operate in extremely low temperature conditions.

Maximum Output Current: 4 A

Capable of supplying a high current to drive the MOSFETs effectively.

Nominal Supply Voltage: 12 V

Ideal voltage level for optimal performance of the gate driver.

Turn-on Time: 0.02 us

Fast turn-on time ensures quick activation of the MOSFETs for efficient operation.

Turn-off Time: 0.015 us

Fast turn-off time helps in rapid deactivation of the MOSFETs for precise control.

Technical Specifications

MOSFET Gate Drivers UCD7100APWP attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

4 A

Nominal Output Peak Current Limit:

4 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Current:

2.5 mA

Maximum Supply Voltage:

14.5 V

Minimum Supply Voltage:

4.25 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Turn-off Time:

.015 us

Turn-on Time:

.02 us

Width:

4.4 mm

Trade Compliance

UCD7100APWP Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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