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UCD7100RGYR

Texas Instruments

UCD7100RGYR by Texas Instruments

UCD7100RGYR by Texas Instruments is a MOSFET gate driver with 14 terminals, operating voltage of 4.25-14.5V, and peak current limit of 4A. It is designed for industrial applications requiring precise power control in compact spaces due to its small square package style and wide temperature range (-40 to 105°C). The device offers surface mount capability and features a buffer or inverter based interface IC type for efficient power management solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,355 parts In-Stock

1+ parts

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6,355

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Digiode

USA . 2,096 parts In-Stock

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2,096

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 745 parts In-Stock

1+ parts

$2.500

100+ parts

-

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745

$2.500

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AZTECH Wire

Italy . 518 parts In-Stock

1+ parts

$9.092

100+ parts

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518

$9.092

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Parana Technologies

USA . 1,761 parts In-Stock

1+ parts

$12.794

100+ parts

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$13.261

10k+ parts

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1,761

$12.794

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$13.261

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DigiPath Technology Company

USA . 473 parts In-Stock

1+ parts

$14.088

100+ parts

$12.960

1k+ parts

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473

$14.088

$12.960

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ChromeModa Solutions

Germany . 3,161 parts In-Stock

1+ parts

$14.375

100+ parts

$11.788

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3,161

$14.375

$11.788

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IDEA Electronic Components Group

UK . 1,144 parts In-Stock

1+ parts

$14.375

100+ parts

$13.656

1k+ parts

$12.938

10k+ parts

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1,144

$14.375

$13.656

$12.938

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Corphita

USA . 2,662 parts In-Stock

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2,662

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Overview

Unlock the potential of your power systems with the UCD7100RGYR by Texas Instruments. Designed with precision and reliability in mind, this MOSFET Gate Driver offers industry-leading performance for a wide range of applications. From power supplies to motor control, this chip carrier package combines cutting-edge technology with a compact square shape, making it ideal for space-constrained designs. With a nominal supply voltage of 12V and a maximum output peak current limit of 4A, the UCD7100RGYR delivers the value, benefits, and advantages you need to take your projects to the next level. Trust Texas Instruments to bring innovation to your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product ideal for applications where weight and durability are important factors.

Surface Mount: YES

Surface mount technology allows for easy and efficient mounting, saving space and simplifying the manufacturing process.

Maximum Supply Voltage: 14.5 V

Higher maximum supply voltage allows for increased flexibility in power supply options and potential applications.

Package Shape: SQUARE

Square shape is compact and easily mountable, making it suitable for small and tight spaces.

Power Supplies (V): 12

Stable and standard power supply voltage ensures consistent performance and compatibility with common power sources.

No. of Terminals: 14

Higher number of terminals allow for more connections and flexibility in circuit design.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Versatile package style options provide compatibility with various mounting and cooling methods, allowing for customization based on application requirements.

Minimum Supply Voltage: 4.25 V

Low minimum supply voltage allows for operation in systems with limited power availability.

Maximum Operating Temperature: 105 °C

High maximum operating temperature ensures reliable performance in harsh environments and under high temperature conditions.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for use in extreme cold environments without compromising performance.

Terminal Position: QUAD

Quad terminal position provides balanced connectivity and allows for easy integration into quad setups.

Maximum Seated Height: 1 mm

Low seated height is suitable for applications with limited vertical space.

Width: 3.5 mm

Compact width makes the product suitable for use in tight layouts and small form factor designs.

Length: 3.5 mm

Compact length allows for efficient use of space and easy integration into various setups.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating ensures reliable operation in industrial settings with high temperature fluctuations.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and reduces the risk of harmful lead exposure.

Nominal Supply Voltage: 12 V

Standard nominal supply voltage allows for easy integration into existing systems and compatibility with common power sources.

Terminal Pitch: 0.5 mm

Small terminal pitch enables high-density mounting and precise connections in compact designs.

Nominal Output Peak Current Limit: 4 A

High output peak current limit provides sufficient power for driving MOSFETs effectively in various applications.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Versatile interface IC type allows for compatibility with different types of MOSFETs and diverse circuit configurations.

Technical Specifications

MOSFET Gate Drivers UCD7100RGYR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

S-PQCC-N14

Length:

3.5 mm

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC14/18,.14SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

14.5 V

Minimum Supply Voltage:

4.25 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

3.5 mm

Trade Compliance

UCD7100RGYR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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