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UCD7201RSA

Texas Instruments

UCD7201RSA by Texas Instruments

UCD7201RSA by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating at 12V. It has a turn-on/off time of 0.035us and can handle a peak current limit of 4A. Ideal for industrial applications requiring precise control over MOSFET switching.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,695 parts In-Stock

1+ parts

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9,695

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Digiode

USA . 3,491 parts In-Stock

1+ parts

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3,491

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 667 parts In-Stock

1+ parts

$5.500

100+ parts

-

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667

$5.500

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AZTECH Wire

Italy . 734 parts In-Stock

1+ parts

$10.318

100+ parts

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734

$10.318

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Parana Technologies

USA . 1,594 parts In-Stock

1+ parts

$11.995

100+ parts

-

1k+ parts

$12.400

10k+ parts

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1,594

$11.995

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$12.400

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DigiPath Technology Company

USA . 452 parts In-Stock

1+ parts

$13.207

100+ parts

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452

$13.207

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ChromeModa Solutions

Germany . 4,248 parts In-Stock

1+ parts

$13.477

100+ parts

$11.051

1k+ parts

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10k+ parts

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4,248

$13.477

$11.051

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IDEA Electronic Components Group

UK . 233 parts In-Stock

1+ parts

$13.477

100+ parts

$12.803

1k+ parts

$12.129

10k+ parts

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233

$13.477

$12.803

$12.129

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Corphita

USA . 4,634 parts In-Stock

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4,634

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Overview

Elevate your power management systems with the UCD7201RSA by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality MOSFET gate drivers that provide reliable performance and durability. Whether you're in automotive, industrial, or consumer electronics, this versatile product offers unmatched value with its fast turn-on/off times, high peak current limits, and wide temperature range. Trust Texas Instruments to elevate your design and exceed your expectations with the UCD7201RSA gate driver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for electronic applications.

Surface Mount: YES

Surface mount capability makes the product easier to integrate onto circuit boards, saving space and assembly time.

Maximum Supply Voltage: 15 V

A high maximum supply voltage allows for a wide range of applications and flexibility in power input.

No. of Functions: 2

Having 2 functions in one device offers cost savings and efficiency in driving MOSFETs.

Package Shape: SQUARE

The square package shape allows for easy placement and alignment on circuit boards.

Power Supplies (V): 12

A nominal supply voltage of 12V ensures compatibility with common power sources in electronic systems.

No. of Terminals: 16

Having 16 terminals provides multiple connection points for enhanced functionality and versatility.

Package Style (Meter): CHIP CARRIER, VERY THIN PROFILE

The chip carrier and thin profile design enable compact and efficient PCB layout.

Minimum Supply Voltage: 4.5 V

A low minimum supply voltage allows for operation in a wide range of power environments.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature ensures reliability and stability in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for operation in extreme cold environments.

Terminal Position: QUAD

The quad terminal position provides a stable and secure connection for external components.

Maximum Seated Height: 1 mm

The low seated height allows for a compact and sleek design in electronic devices.

Width: 4 mm

The small width makes the product suitable for applications with space constraints.

Length: 4 mm

The compact length enables easy integration into a variety of electronic systems.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures high performance and durability in industrial applications.

Terminal Form: NO LEAD

The no lead terminal form simplifies assembly and reduces the risk of soldering errors.

Nominal Supply Voltage: 12 V

The nominal supply voltage of 12V ensures compatibility with standard power sources in electronic systems.

Turn-on Time: 0.035 us

The fast turn-on time enhances the responsiveness and efficiency of the MOSFET gate driver.

Terminal Pitch: 0.65 mm

The small terminal pitch allows for compact and efficient PCB design.

Nominal Output Peak Current Limit: 4 A

The high nominal output peak current limit allows for driving high-power MOSFETs with ease.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Having a buffer or inverter based interface IC type provides flexibility and compatibility with different circuit configurations.

Turn-off Time: 0.035 us

The fast turn-off time ensures precise control and switching of the MOSFETs.

Technical Specifications

MOSFET Gate Drivers UCD7201RSA attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

S-PQCC-N16

Length:

4 mm

No. of Functions:

2

No. of Terminals:

16

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.16SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Turn-off Time:

.035 us

Turn-on Time:

.035 us

Width:

4 mm

Trade Compliance

UCD7201RSA Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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