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UCC37323DR

Texas Instruments

UCC37323DR by Texas Instruments

UCC37323DR by Texas Instruments is a MOSFET gate driver with 2 functions, operating at 4.5-15V. It features totem-pole output polarity and can handle up to 4A of current. Ideal for applications requiring fast turn-on/off times in commercial temperature range.

Median Price

$0.682

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 50 parts In-Stock

1+ parts

$0.177

100+ parts

$0.171

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-

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50

$0.177

$0.171

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Chip1Stop

Japan . 2,049 parts In-Stock

1+ parts

$0.401

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-

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2,049

$0.401

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Texas Instruments

USA . 47,835 parts In-Stock

1+ parts

$0.741

100+ parts

$0.570

1k+ parts

$0.300

10k+ parts

-

47,835

$0.741

$0.570

$0.300

-

DigiKey

USA . 4,832 parts In-Stock

1+ parts

$1.130

100+ parts

$0.652

1k+ parts

$0.572

10k+ parts

-

4,832

$1.130

$0.652

$0.572

-

Mouser Electronics

USA . 576 parts In-Stock

1+ parts

$1.130

100+ parts

$0.653

1k+ parts

$0.573

10k+ parts

$0.530

576

$1.130

$0.653

$0.573

$0.530

Verical

USA . 1,899 parts In-Stock

1+ parts

-

100+ parts

$0.624

1k+ parts

$0.538

10k+ parts

$0.483

1,899

-

$0.624

$0.538

$0.483

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,247 parts In-Stock

1+ parts

$0.176

100+ parts

-

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2,247

$0.176

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.794

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600

$0.794

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Vyrian

USA . 9,707 parts In-Stock

1+ parts

-

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9,707

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,581 parts In-Stock

1+ parts

$0.145

100+ parts

-

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9,581

$0.145

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Corphita

USA . 4,796 parts In-Stock

1+ parts

$0.166

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4,796

$0.166

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Semicontronic

India . 9,646 parts In-Stock

1+ parts

$0.316

100+ parts

$0.308

1k+ parts

$0.307

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9,646

$0.316

$0.308

$0.307

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Argo Parts USA

USA . 4,809 parts In-Stock

1+ parts

$0.794

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4,809

$0.794

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Netroflash

USA . 500 parts In-Stock

1+ parts

$0.794

100+ parts

$0.779

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500

$0.794

$0.779

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Continental Prestige Electronics

USA . 335 parts In-Stock

1+ parts

$0.794

100+ parts

-

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$0.779

335

$0.794

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-

$0.779

Corohmni

South Africa . 202 parts In-Stock

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$0.935

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202

$0.935

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Parana Technologies

USA . 999 parts In-Stock

1+ parts

$5.440

100+ parts

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$6.148

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999

$5.440

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$6.148

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DigiPath Technology Company

USA . 1,506 parts In-Stock

1+ parts

$5.990

100+ parts

$5.511

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1,506

$5.990

$5.511

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ChromeModa Solutions

Germany . 446 parts In-Stock

1+ parts

$6.112

100+ parts

$5.012

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446

$6.112

$5.012

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IDEA Electronic Components Group

UK . 370 parts In-Stock

1+ parts

$6.112

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$5.501

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370

$6.112

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$5.501

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A-Z Elektronik GmbH

Germany . 16,677 parts In-Stock

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16,677

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Lixinc

USA . 13,523 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Perfect Parts

USA . 280 parts In-Stock

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280

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Overview

Experience the superior performance and reliability of the UCC37323DR MOSFET Gate Driver from Texas Instruments. Designed with cutting-edge technology, this small outline package offers two functions in one, making it ideal for a wide range of applications. With a maximum supply voltage of 15V and an impressive output current of 4A, this driver provides exceptional value and benefits to customers looking for high-quality solutions. Trust Texas Instruments for top-of-the-line products that deliver unmatched efficiency and precision in every use. Choose the UCC37323DR for your next project and experience the difference that quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and protection for the internal components of the gate driver.

Surface Mount: YES

Surface mount capability makes it easy to integrate the gate driver into various PCB designs.

No. of Functions: 2

Having two functions in one device saves space on the PCB and simplifies the design.

Maximum Supply Voltage: 15 V

Can support a maximum supply voltage of 15V, making it suitable for a wide range of applications.

Minimum Operating Temperature: 0 °C

Capable of operating at low temperatures, ensuring reliable performance in various environments.

Maximum Output Current: 4 A

Can deliver a maximum output current of 4A, suitable for driving MOSFETs in high-power applications.

Technology: BICMOS

Utilizes BICMOS technology, which combines the advantages of both bipolar and CMOS technologies for efficient operation.

Nominal Supply Voltage: 14 V

Designed to operate at a nominal supply voltage of 14V, commonly used in many electronic systems.

Turn-on Time: 0.04 us

Fast turn-on time of 0.04us ensures quick response and efficient switching of MOSFETs.

Technical Specifications

MOSFET Gate Drivers UCC37323DR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

4 A

Nominal Output Peak Current Limit:

4 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/15

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.45 mA

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

14 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.05 us

Turn-on Time:

.04 us

Width:

3.9 mm

Trade Compliance

UCC37323DR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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