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UCC27425DG4

Texas Instruments

UCC27425DG4 by Texas Instruments

UCC27425DG4 by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating at -40 to 105°C. It has a supply voltage range of 4.5-15V and can handle up to 4A output current. Ideal for industrial applications requiring fast turn-on/off times and complementary output polarity in a small outline package.

Median Price

$1.950

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 259 parts In-Stock

1+ parts

$1.950

100+ parts

$1.410

1k+ parts

$1.150

10k+ parts

$0.861

259

$1.950

$1.410

$1.150

$0.861

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 71 parts In-Stock

1+ parts

$1.330

100+ parts

-

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71

$1.330

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-

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Digiode

USA . 82 parts In-Stock

1+ parts

$1.852

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-

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82

$1.852

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Vyrian

USA . 8,449 parts In-Stock

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-

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8,449

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$1.303

100+ parts

-

1k+ parts

$1.251

10k+ parts

-

1,000

$1.303

-

$1.251

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Corohmni

South Africa . 119 parts In-Stock

1+ parts

$1.330

100+ parts

-

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119

$1.330

-

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Continental Prestige Electronics

USA . 6,239 parts In-Stock

1+ parts

$1.330

100+ parts

-

1k+ parts

-

10k+ parts

$1.303

6,239

$1.330

-

-

$1.303

Argo Parts USA

USA . 529 parts In-Stock

1+ parts

$1.330

100+ parts

-

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529

$1.330

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Ampacity Inc.

Singapore . 259 parts In-Stock

1+ parts

$1.660

100+ parts

-

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259

$1.660

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Semicontronic

India . 143 parts In-Stock

1+ parts

$1.660

100+ parts

$1.618

1k+ parts

$1.610

10k+ parts

-

143

$1.660

$1.618

$1.610

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Corphita

USA . 2,352 parts In-Stock

1+ parts

$1.755

100+ parts

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2,352

$1.755

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Parana Technologies

USA . 417 parts In-Stock

1+ parts

$3.351

100+ parts

-

1k+ parts

$3.876

10k+ parts

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417

$3.351

-

$3.876

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DigiPath Technology Company

USA . 74 parts In-Stock

1+ parts

$3.690

100+ parts

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74

$3.690

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ChromeModa Solutions

Germany . 3,356 parts In-Stock

1+ parts

$3.765

100+ parts

$3.087

1k+ parts

-

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3,356

$3.765

$3.087

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IDEA Electronic Components Group

UK . 1,246 parts In-Stock

1+ parts

$3.765

100+ parts

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$3.388

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1,246

$3.765

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$3.388

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AZTECH Wire

Italy . 207 parts In-Stock

1+ parts

$5.904

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207

$5.904

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Microchip USA

USA . 2,637 parts In-Stock

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2,637

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Perfect Parts

USA . 252 parts In-Stock

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252

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Overview

Enhance the performance of your power management systems with the UCC27425DG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and reliability. This MOSFET Gate Driver is designed to optimize efficiency and control in a variety of applications. With its advanced technology and robust design, this product offers unmatched value, benefits, and advantages to customers. Upgrade your systems today with the UCC27425DG4 for superior performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the gate driver, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy integration onto PCBs, saving space and simplifying assembly processes.

Maximum Supply Voltage: 15 V

Can support high supply voltage applications, making it versatile for a wide range of uses.

No. of Functions: 2

Offers multiple functions in a single package, reducing the need for additional components and simplifying circuit design.

Minumum Supply Voltage: 4.5 V

Works efficiently with low supply voltages, making it suitable for battery-operated devices or low-power applications.

Maximum Operating Temperature: 105 °C

Capable of withstanding high temperatures, ensuring reliable performance in demanding environments.

Output Characteristics: TOTEM-POLE

Provides both sourcing and sinking capabilities, improving the drive strength and efficiency of connected MOSFETs.

Technology: BICMOS

Combines the advantages of both bipolar and CMOS technologies, offering high performance and low power consumption.

Maximum Output Current: 4 A

Can deliver high current to the MOSFET gates, enabling fast switching and efficient operation of power electronics.

Technical Specifications

MOSFET Gate Drivers UCC27425DG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

4 A

Nominal Output Peak Current Limit:

4 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/15

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

1.6 mA

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

14 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.04 us

Width:

3.9 mm

Trade Compliance

UCC27425DG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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