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UCC23514SDWV

Texas Instruments

UCC23514SDWV by Texas Instruments

UCC23514SDWV by Texas Instruments is a MOSFET gate driver with a max supply voltage of 33V and output current of 4.5A. Ideal for automotive applications, it operates in temperatures ranging from -40 to 125°C, featuring push-pull output characteristics and a turn-on/off time of 0.105us.

Median Price

$2.190

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 34,447 parts In-Stock

1+ parts

$2.190

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34,447

$2.190

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,840 parts In-Stock

1+ parts

$2.080

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3,840

$2.080

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Vyrian

USA . 9,000 parts In-Stock

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9,000

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Distributors (Availability)

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Corphita

USA . 1,593 parts In-Stock

1+ parts

$1.971

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1,593

$1.971

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Parana Technologies

USA . 2,243 parts In-Stock

1+ parts

$6.913

100+ parts

-

1k+ parts

$7.514

10k+ parts

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2,243

$6.913

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$7.514

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DigiPath Technology Company

USA . 2 parts In-Stock

1+ parts

$7.612

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2

$7.612

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ChromeModa Solutions

Germany . 1,681 parts In-Stock

1+ parts

$7.767

100+ parts

$6.369

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1,681

$7.767

$6.369

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IDEA Electronic Components Group

UK . 1,292 parts In-Stock

1+ parts

$7.767

100+ parts

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$6.990

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1,292

$7.767

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$6.990

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AZTECH Wire

Italy . 524 parts In-Stock

1+ parts

$15.030

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524

$15.030

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QUARKTWIN TECHNOLOGY LTD

USA . 17,802 parts In-Stock

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17,802

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Overview

Unlock the power of your designs with the UCC23514SDWV by Texas Instruments, a top-tier manufacturer known for quality and reliability. As a leading MOSFET Gate Driver, this product is perfect for a wide range of applications in automotive and industrial settings. With a compact design and advanced features like push-pull output and high side driver capability, this driver offers unparalleled value and performance. Trust Texas Instruments to deliver cutting-edge technology that takes your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the components inside, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and compact placement on circuit boards, saving space and simplifying assembly.

Maximum Supply Voltage-1: 33 V

High maximum supply voltage allows for compatibility with a wide range of power sources, increasing versatility.

No. of Terminals: 8

Having 8 terminals provides flexibility in connectivity and allows for multiple connection options.

Output Characteristics: PUSH-PULL

Push-pull output configuration enhances efficiency and reduces power losses, resulting in improved performance.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability under various environmental conditions.

High Side Driver: YES

Inclusion of a high side driver simplifies the design of high-side switching circuits, making it a convenient choice for certain applications.

Nominal Output Peak Current Limit: 5.3 A

The high output peak current limit allows for driving high-power MOSFETs efficiently, making it suitable for demanding applications.

Technical Specifications

MOSFET Gate Drivers UCC23514SDWV attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

7.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Maximum Output Current:

4.5 A

Nominal Output Peak Current Limit:

5.3 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.8 mm

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

14 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.105 us

Turn-on Time:

.105 us

Width:

5.85 mm

Trade Compliance

UCC23514SDWV Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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