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TS3V330RGYRG4

Texas Instruments

TS3V330RGYRG4 by Texas Instruments

TS3V330RGYRG4 by Texas Instruments is a 4-function SPDT switch with 3.3V nominal voltage, 7 ohm max on-state resistance, and 50 dB off-state isolation. Ideal for industrial applications requiring fast switching times and low power consumption. Package style: chip carrier with very thin profile.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,455 parts In-Stock

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7,455

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Digiode

USA . 617 parts In-Stock

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617

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,199 parts In-Stock

1+ parts

$1.500

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-

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1,199

$1.500

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Semicontronic

India . 1,496 parts In-Stock

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$2.500

100+ parts

$2.438

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$2.425

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1,496

$2.500

$2.438

$2.425

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One Stop Electronics

USA . 833 parts In-Stock

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$2.500

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833

$2.500

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AZTECH Wire

Italy . 849 parts In-Stock

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$6.801

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849

$6.801

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Parana Technologies

USA . 1,786 parts In-Stock

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$13.439

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$13.957

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1,786

$13.439

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$13.957

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DigiPath Technology Company

USA . 1,578 parts In-Stock

1+ parts

$14.798

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1,578

$14.798

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ChromeModa Solutions

Germany . 3,679 parts In-Stock

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$15.100

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$12.382

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3,679

$15.100

$12.382

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IDEA Electronic Components Group

UK . 360 parts In-Stock

1+ parts

$15.100

100+ parts

$14.345

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$13.590

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360

$15.100

$14.345

$13.590

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Corphita

USA . 1,805 parts In-Stock

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1,805

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Corohmni

South Africa . 392 parts In-Stock

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Kepictronics

USA . 300 parts In-Stock

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300

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Overview

Experience seamless and reliable signal routing with the TS3V330RGYRG4 by Texas Instruments. Crafted with precision and expertise, this multiplexer & switch offers unparalleled performance and versatility for a wide range of applications. From industrial automation to telecommunications, this cutting-edge product ensures optimal functionality and efficiency. Trust in Texas Instruments to deliver top-quality solutions that elevate your projects to new heights. Explore the endless possibilities with the TS3V330RGYRG4 and discover the value it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to environmental factors, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mountable, this product can be easily integrated into electronic circuit boards, enabling compact and space-saving designs.

No. of Functions: 4

Having 4 functions provides versatility and flexibility in signal routing and management, making it suitable for a variety of applications.

Nominal Supply Voltage (Vsup): 3.3 V

Operating at a relatively low voltage of 3.3V is energy-efficient and helps reduce power consumption.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures (up to 85°C) makes this product suitable for industrial applications where heat dissipation is a concern.

Technical Specifications

Multiplexers & Switches TS3V330RGYRG4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

Maximum Input Voltage:

5.5 V

Minimum Input Voltage:

0 V

JESD-30 Code:

R-PQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

4

No. of Terminals:

16

Nominal Off-state Isolation:

50 dB

Maximum On-state Resistance (Ron):

7 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16/20,.14X.16,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.6 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Maximum Switch-off Time:

3.5 ns

Maximum Switch-on Time:

6.5 ns

Switching (V):

BREAK-BEFORE-MAKE

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.5 mm

Trade Compliance

TS3V330RGYRG4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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