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TS3V330DRG4

Texas Instruments

TS3V330DRG4 by Texas Instruments

TS3V330DRG4 by Texas Instruments is a 4-function SPDT switch with 16 terminals, operating at 3.3V. With a max on-state resistance of 7 ohm and switching time of 6.5 ns, it's ideal for industrial applications requiring high-speed signal routing in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,539 parts In-Stock

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4,539

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Vyrian

USA . 2,271 parts In-Stock

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2,271

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,293 parts In-Stock

1+ parts

$2.500

100+ parts

-

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1,293

$2.500

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One Stop Electronics

USA . 744 parts In-Stock

1+ parts

$3.500

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-

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744

$3.500

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Semicontronic

India . 1,200 parts In-Stock

1+ parts

$6.500

100+ parts

$6.338

1k+ parts

$6.305

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-

1,200

$6.500

$6.338

$6.305

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Parana Technologies

USA . 1,903 parts In-Stock

1+ parts

$12.132

100+ parts

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$12.541

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1,903

$12.132

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$12.541

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ChromeModa Solutions

Germany . 2,092 parts In-Stock

1+ parts

$13.631

100+ parts

$11.177

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2,092

$13.631

$11.177

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IDEA Electronic Components Group

UK . 1,000 parts In-Stock

1+ parts

$13.631

100+ parts

$12.949

1k+ parts

$12.268

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-

1,000

$13.631

$12.949

$12.268

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AZTECH Wire

Italy . 592 parts In-Stock

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$13.805

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592

$13.805

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Corphita

USA . 1,827 parts In-Stock

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1,827

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DigiPath Technology Company

USA . 508 parts In-Stock

1+ parts

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$12.290

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508

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$12.290

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Corohmni

South Africa . 490 parts In-Stock

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490

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Overview

Discover the TS3V330DRG4 by Texas Instruments, a top-tier manufacturer known for its exceptional quality and reliability. This multiplexer & switch offers versatile applications, providing seamless performance in various electronic devices. With a focus on delivering value to customers, this product stands out for its efficiency, precision, and durability. Experience the benefits of advanced technology with the TS3V330DRG4, delivering optimal results and exceeding expectations. Elevate your projects with this innovative solution from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Surface Mount: YES

Allows for easy and efficient installation onto circuit boards, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 3.3 V

Compatible with a commonly used supply voltage, making it versatile for various applications.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments where heat may be a factor.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during manufacturing processes, ensuring reliability during assembly.

Maximum On-state Resistance (Ron): 7 ohm

Low resistance leads to minimal signal loss and efficient signal transmission.

Maximum Switch-on Time: 6.5 ns

Fast switching time ensures quick response and operation of the multiplexer.

Technical Specifications

Multiplexers & Switches TS3V330DRG4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

4

No. of Terminals:

16

Nominal Off-state Isolation:

50 dB

Maximum On-state Resistance (Ron):

7 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Maximum Switch-off Time:

3.5 ns

Maximum Switch-on Time:

6.5 ns

Switching (V):

BREAK-BEFORE-MAKE

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

TS3V330DRG4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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