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TPS65930BZCH

Texas Instruments

TPS65930BZCH by Texas Instruments

TPS65930BZCH by Texas Instruments is a Power Management IC with 139 terminals, operating b/w -40 to 85°C. It supports 7 channels with a supply voltage range of 2.7V to 4.5V and nominal threshold voltages of +1.8V and +2.1V. Ideal for applications requiring precise power supply support circuits in compact spaces due to its low profile grid array package design.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,300 parts In-Stock

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Digiode

USA . 2,673 parts In-Stock

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Speed Components Ltd

Israel . 25 parts In-Stock

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LWI Electronics Inc

India . 14 parts In-Stock

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Parana Technologies

USA . 2,056 parts In-Stock

1+ parts

$1.055

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$1.914

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2,056

$1.055

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$1.914

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ChromeModa Solutions

Germany . 3,948 parts In-Stock

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$1.185

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$0.972

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$1.185

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IDEA Electronic Components Group

UK . 942 parts In-Stock

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$1.185

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$1.066

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942

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One Stop Electronics

USA . 251 parts In-Stock

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$1.500

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$1.500

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AZTECH Wire

Italy . 562 parts In-Stock

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$6.429

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Component Stockers USA

USA . 4,789 parts In-Stock

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$10.880

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$10.330

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$10.000

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4,789

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A-Z Elektronik GmbH

Germany . 6,177 parts In-Stock

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Corphita

USA . 4,292 parts In-Stock

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DigiPath Technology Company

USA . 2,289 parts In-Stock

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$1.068

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Microchip USA

USA . 394 parts In-Stock

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Kepictronics

USA . 128 parts In-Stock

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Overview

Enhance your power management capabilities with the TPS65930BZCH by Texas Instruments. As a reputable manufacturer in the industry, Texas Instruments delivers top-notch quality and reliability in their products. The TPS65930BZCH falls under the category of Power Management ICs, offering a wide range of applications for various electronic devices. With 7 channels and a compact design, this IC provides efficient power supply support while maintaining a low profile and fine pitch package style. Experience the benefits of enhanced performance and simplified power management with the TPS65930BZCH.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and protection for the internal components of the IC, ensuring a longer lifespan for the product.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage (Vsup): 3.6 V

Supports a common supply voltage of 3.6V, making it compatible with a wide range of applications and voltage requirements.

No. of Terminals: 139

The high number of terminals allows for multiple connections and configurations, offering flexibility in circuit design.

Maximum Operating Temperature: 85 °C

Can operate effectively within a wide temperature range, making it suitable for various environments and applications.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold temperatures, ensuring reliable performance in harsh conditions.

No. of Channels: 7

Multiple channels provide the ability to handle different power management tasks simultaneously, increasing efficiency and performance.

Terminal Pitch: 0.65 mm

The small terminal pitch allows for high-density mounting, enabling compact and space-saving designs.

Technical Specifications

Power Management ICs TPS65930BZCH attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

ALSO AVAILABLE THRESHOLD ARE +2.65V, +2.85V, +2.7V, +3.2V

Adjustable Threshold:

NO

JESD-30 Code:

S-PBGA-B139

Length:

10 mm

No. of Channels:

7

No. of Functions:

1

No. of Terminals:

139

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA139,14X14,25

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.3 mm

Maximum Supply Voltage (Vsup):

4.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Nominal Threshold Voltage (V):

+1.8V,+2.1V

Width (mm):

10 mm

Trade Compliance

TPS65930BZCH Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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