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TPS3103E12DBVRG4

Texas Instruments

TPS3103E12DBVRG4 by Texas Instruments

TPS3103E12DBVRG4 by Texas Instruments is a Power Management IC with Vsup of 1.2V, Isup of 0.022mA, and V thresholds at +1.142V. It is used in industrial applications for power supply support circuits due to its compact size and wide operating temperature range from -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 35,000 parts In-Stock

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Vyrian

USA . 3,850 parts In-Stock

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3,850

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Semi Source

USA . 3,567 parts In-Stock

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3,567

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Bristol Electronics

USA . 3,429 parts In-Stock

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3,429

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Atlantic Semiconductor

USA . 3,429 parts In-Stock

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3,429

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Resion

USA . 1,701 parts In-Stock

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Digiode

USA . 548 parts In-Stock

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548

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Distributors (Availability)

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One Stop Electronics

USA . 490 parts In-Stock

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$0.500

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490

$0.500

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Parana Technologies

USA . 1,596 parts In-Stock

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$9.551

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$10.148

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$9.551

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DigiPath Technology Company

USA . 1,618 parts In-Stock

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$10.516

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$9.675

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$10.516

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ChromeModa Solutions

Germany . 5,061 parts In-Stock

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$10.731

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$8.799

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5,061

$10.731

$8.799

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IDEA Electronic Components Group

UK . 660 parts In-Stock

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$10.731

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$10.194

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$9.658

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660

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$9.658

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AZTECH Wire

Italy . 207 parts In-Stock

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$18.573

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Kepictronics

USA . 27,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,739 parts In-Stock

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Corphita

USA . 4,589 parts In-Stock

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Microchip USA

USA . 3,604 parts In-Stock

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Overview

Enhance your power management capabilities with the TPS3103E12DBVRG4 by Texas Instruments. Crafted with precision and reliability, this Power Management IC offers unparalleled performance in a compact package. Ideal for a wide range of applications, this product ensures optimal efficiency and stability in your electronic devices. Experience peace of mind knowing that you are investing in a high-quality solution that prioritizes both functionality and durability. Upgrade your power supply support circuit with the TPS3103E12DBVRG4 today and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for the package, ensuring the power management IC is protected and long-lasting.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on PCBs, making it convenient for assembly and efficient use of board space.

Nominal Supply Voltage (Vsup): 1.2 V

A low nominal supply voltage of 1.2 V indicates energy efficiency and compatibility with low-power applications, reducing power consumption.

No. of Terminals: 6

With 6 terminals, this power management IC offers flexibility in connecting to various components or peripherals, enabling versatile functionality.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85°C ensures stable performance under demanding conditions, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature (-40°C) allows the power management IC to function reliably in harsh environments or extreme temperatures.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and compatibility with various digital circuits, enhancing the efficiency and performance of the power management IC.

Terminal Pitch: 0.95 mm

Narrow terminal pitch of 0.95 mm facilitates high-density mounting on PCBs, enabling compact designs and efficient use of board space.

Technical Specifications

Power Management ICs TPS3103E12DBVRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 1.142V; POWER ON RESET GENERATOR

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.4/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.022 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage (Vsup):

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.142V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.6 mm

Trade Compliance

TPS3103E12DBVRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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