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TPS28226DRBT

Texas Instruments

TPS28226DRBT by Texas Instruments

TPS28226DRBT by Texas Instruments is a MOSFET gate driver with 2 channels, 6A output current, and 8V max supply voltage. It features a small outline package suitable for automotive applications. With a temperature range of -40 to 125°C, it offers high side driver functionality for efficient power management.

Median Price

$1.290

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,767 parts In-Stock

1+ parts

$0.730

100+ parts

$0.720

1k+ parts

$0.700

10k+ parts

-

1,767

$0.730

$0.720

$0.700

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DigiKey

USA . 21 parts In-Stock

1+ parts

$1.850

100+ parts

-

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21

$1.850

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Distributors (In-Stock)

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Digiode

USA . 2,895 parts In-Stock

1+ parts

$0.694

100+ parts

-

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-

10k+ parts

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2,895

$0.694

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-

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.888

100+ parts

-

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900

$0.888

-

-

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Vyrian

USA . 7,845 parts In-Stock

1+ parts

-

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7,845

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Sensible Micro Corp

USA . 2,280 parts In-Stock

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2,280

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Inventory MP

USA . 30 parts In-Stock

1+ parts

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30

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Bristol Electronics

USA . 30 parts In-Stock

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 858 parts In-Stock

1+ parts

$0.620

100+ parts

-

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858

$0.620

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-

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Corphita

USA . 3,300 parts In-Stock

1+ parts

$0.657

100+ parts

-

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3,300

$0.657

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-

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Netroflash

USA . 50 parts In-Stock

1+ parts

$0.888

100+ parts

$0.870

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-

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50

$0.888

$0.870

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Parana Technologies

USA . 1,439 parts In-Stock

1+ parts

$8.054

100+ parts

-

1k+ parts

$8.640

10k+ parts

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1,439

$8.054

-

$8.640

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ChromeModa Solutions

Germany . 3,240 parts In-Stock

1+ parts

$9.050

100+ parts

$7.421

1k+ parts

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3,240

$9.050

$7.421

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IDEA Electronic Components Group

UK . 984 parts In-Stock

1+ parts

$9.050

100+ parts

$8.598

1k+ parts

$8.145

10k+ parts

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984

$9.050

$8.598

$8.145

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Microchip USA

USA . 1,379 parts In-Stock

1+ parts

$56.710

100+ parts

$55.720

1k+ parts

$55.230

10k+ parts

$54.740

1,379

$56.710

$55.720

$55.230

$54.740

Futuretech Components

Singapore . 3,000 parts In-Stock

1+ parts

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3,000

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Perfect Parts

USA . 1,812 parts In-Stock

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1,812

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A-Z Elektronik GmbH

Germany . 866 parts In-Stock

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866

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DigiPath Technology Company

USA . 562 parts In-Stock

1+ parts

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$8.159

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562

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$8.159

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Kepictronics

USA . 100 parts In-Stock

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100

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Overview

Elevate your power management systems with the TPS28226DRBT by Texas Instruments. This MOSFET gate driver boasts the trusted quality of a leading manufacturer, ensuring reliable performance in automotive applications and beyond. With a compact, heat sink profile and dual terminal design, this innovative driver delivers seamless power supply at a nominal voltage of 7.2V. Experience the efficiency and precision of Texas Instruments technology with the TPS28226DRBT - unlocking new possibilities for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product suitable for various applications while ensuring longevity.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 8 V

Provides flexibility in power input options and compatibility with a wide range of systems.

Package Shape: SQUARE

Square shape allows for efficient use of space on the circuit board, maximizing component layout.

Power Supplies (V): 7.2

Optimal power supply voltage for efficient performance and reliable operation.

No. of Terminals: 8

Sufficient number of terminals for connecting to other components and ensuring proper functionality.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Compact design with a heat sink/slug for effective heat dissipation and space-saving benefits in tight installations.

Minimum Supply Voltage: 6.8 V

Provides a minimum operating voltage for ensuring the device's functionality within specified parameters.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures, making it suitable for demanding environments.

Minimum Operating Temperature: -40 °C

Designed to withstand low temperatures, making it suitable for use in a wide range of conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality finish for optimal electrical conductivity and corrosion resistance, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for versatile installation and connection options, enhancing flexibility in system design.

Maximum Seated Height: 1 mm

Low profile design for space-saving benefits and compatibility with compact circuit board layouts.

Width: 3 mm

Compact width for efficient use of space on the circuit board, enabling a neat and organized layout.

High Side Driver: YES

High-side driver capability for controlling power to loads efficiently and effectively in various applications.

Maximum Time At Peak Reflow Temperature (s): 30

Ability to withstand peak reflow temperatures for a specified duration, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance for reliable and durable soldering during assembly processes.

Length: 3 mm

Compact length for efficient use of space on the circuit board and compatibility with various installation requirements.

Temperature Grade: AUTOMOTIVE

Designed and graded for automotive applications, ensuring reliability and performance in demanding automotive environments.

Maximum Output Current: 6 A

Capable of handling high output currents for driving MOSFETs and other components efficiently.

No. of Channels: 2

Two channels for driving multiple MOSFETs or components simultaneously, enhancing control and versatility.

Terminal Form: NO LEAD

Lead-free terminal form for environmental friendliness and compliance with regulations, promoting sustainability.

Nominal Supply Voltage: 7.2 V

Stable and reliable supply voltage for consistent performance and optimal operation of the device.

Terminal Pitch: 0.65 mm

Narrow terminal pitch for compact and space-saving connections, enabling a clean and organized circuit board layout.

Moisture Sensitivity Level (MSL): 2

MSL 2 rating indicates moderate moisture sensitivity, suitable for standard manufacturing and handling processes.

Nominal Output Peak Current Limit: 6 A

Nominal output peak current rating for safe and efficient operation of the device under specified conditions.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Buffer or inverter-based interface IC type for compatibility with various control systems and MOSFET configurations.

Technical Specifications

MOSFET Gate Drivers TPS28226DRBT attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

6 A

Nominal Output Peak Current Limit:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

7.2

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

8 V

Minimum Supply Voltage:

6.8 V

Nominal Supply Voltage:

7.2 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

TPS28226DRBT Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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