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TPS2819DBVRG4

Texas Instruments

TPS2819DBVRG4 by Texas Instruments

TPS2819DBVRG4 by Texas Instruments is a MOSFET Gate Driver with a max supply voltage of 40V and output current of 2A. Ideal for automotive applications, it features a small outline package, totem-pole output characteristics, and dual terminal position for efficient power management in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,013 parts In-Stock

1+ parts

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3,013

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Digiode

USA . 2,109 parts In-Stock

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2,109

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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AZTECH Wire

Italy . 859 parts In-Stock

1+ parts

$6.259

100+ parts

-

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859

$6.259

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Parana Technologies

USA . 1,812 parts In-Stock

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$9.847

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$10.415

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1,812

$9.847

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$10.415

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IDEA Electronic Components Group

UK . 1,218 parts In-Stock

1+ parts

$11.064

100+ parts

$10.511

1k+ parts

$9.958

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-

1,218

$11.064

$10.511

$9.958

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ChromeModa Solutions

Germany . 668 parts In-Stock

1+ parts

$11.064

100+ parts

$9.072

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668

$11.064

$9.072

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One Stop Electronics

USA . 170 parts In-Stock

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$17.500

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170

$17.500

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Ampacity Inc.

Singapore . 753 parts In-Stock

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$23.500

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753

$23.500

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Component Stockers USA

USA . 390 parts In-Stock

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$99.990

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390

$99.990

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Microchip USA

USA . 11,880 parts In-Stock

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11,880

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A-Z Elektronik GmbH

Germany . 7,230 parts In-Stock

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Corphita

USA . 4,763 parts In-Stock

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Kepictronics

USA . 3,050 parts In-Stock

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DigiPath Technology Company

USA . 2,160 parts In-Stock

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$9.975

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2,160

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$9.975

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Overview

Elevate your power management system with the TPS2819DBVRG4 MOSFET Gate Driver by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge technology that exceeds industry standards. This versatile driver is perfect for a wide range of applications, offering seamless integration and optimal performance. With features like high-side drivers and true output polarity, this driver provides unmatched value and efficiency. Upgrade your system today with the TPS2819DBVRG4 and experience the benefits of Texas Instruments excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material makes the product light-weight and durable, ideal for applications where weight is a concern.

Surface Mount: YES

Being surface mountable makes it easy to integrate into a circuit board, saving space and simplifying the assembly process.

Maximum Supply Voltage: 14 V

With a maximum supply voltage of 14 V, this driver can handle a wide range of voltage inputs, making it versatile for various applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs and efficient use of space on a PCB.

Power Supplies (V): 10

Running on a 10 V power supply makes it compatible with common voltage sources, making it easy to incorporate into existing systems.

Technical Specifications

MOSFET Gate Drivers TPS2819DBVRG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

2 A

Nominal Output Peak Current Limit:

2 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

10

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.15 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

4 V

Nominal Supply Voltage:

10 V

Maximum Supply Voltage-1:

40 V

Minimum Supply Voltage-1:

8 V

Nominal Supply Voltage-1:

10 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

1.65 mm

Trade Compliance

TPS2819DBVRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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