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TPS2812DG4

Texas Instruments

TPS2812DG4 by Texas Instruments

TPS2812DG4 by Texas Instruments is a MOSFET Gate Driver with 2 functions, operating voltage range of 4-14V. It has a turn-on/off time of 0.05us and can handle output peak current limit of 2A. Ideal for automotive applications due to its Schmitt Trigger input and Totem-Pole output characteristics.

Median Price

$2.480

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 16 parts In-Stock

1+ parts

$2.480

100+ parts

$1.770

1k+ parts

$1.650

10k+ parts

-

16

$2.480

$1.770

$1.650

-

Digiode

USA . 3,489 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,489

-

-

-

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Vyrian

USA . 2,584 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,584

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,860 parts In-Stock

1+ parts

$6.127

100+ parts

-

1k+ parts

$6.897

10k+ parts

-

1,860

$6.127

-

$6.897

-

DigiPath Technology Company

USA . 1,482 parts In-Stock

1+ parts

$6.746

100+ parts

$6.207

1k+ parts

-

10k+ parts

-

1,482

$6.746

$6.207

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-

ChromeModa Solutions

Germany . 469 parts In-Stock

1+ parts

$6.884

100+ parts

$5.645

1k+ parts

-

10k+ parts

-

469

$6.884

$5.645

-

-

IDEA Electronic Components Group

UK . 276 parts In-Stock

1+ parts

$6.884

100+ parts

-

1k+ parts

$6.196

10k+ parts

-

276

$6.884

-

$6.196

-

AZTECH Wire

Italy . 668 parts In-Stock

1+ parts

$10.421

100+ parts

-

1k+ parts

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10k+ parts

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668

$10.421

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One Stop Electronics

USA . 1,371 parts In-Stock

1+ parts

$48.500

100+ parts

-

1k+ parts

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10k+ parts

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1,371

$48.500

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-

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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6,000

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Corphita

USA . 765 parts In-Stock

1+ parts

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765

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Microchip USA

USA . 359 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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359

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Overview

Enhance your electronic designs with the TPS2812DG4 by Texas Instruments, a high-quality MOSFET gate driver that offers precision and reliability. Designed for automotive applications, this small outline package delivers true output polarity and a fast turn-on/off time of 0.05 us, ensuring optimal performance. With Texas Instruments' cutting-edge technology and expertise in semiconductor manufacturing, you can trust that this dual-function driver will provide seamless integration and superior functionality. Upgrade your projects with the TPS2812DG4 and experience the benefits of top-notch engineering and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for applications where weight and durability are important factors.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and making it suitable for compact designs.

Maximum Supply Voltage: 14 V

The high maximum supply voltage of 14V allows for compatibility with a wide range of power supplies, increasing flexibility in design.

No. of Functions: 2

Having multiple functions in a single package simplifies circuit design and reduces the need for additional components, making it a cost-effective solution.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into existing circuit layouts and facilitates efficient use of space on the PCB.

Power Supplies (V): 10

The 10V nominal supply voltage is commonly used in a variety of electronic applications, making it versatile and widely compatible.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting the device to other components and peripherals, enabling a wide range of circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact designs where size constraints are a concern.

Minimum Supply Voltage: 4 V

The low minimum supply voltage of 4V allows for operation in low-power applications and helps in reducing power consumption.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, the device can withstand high temperatures, making it suitable for automotive and industrial applications.

Output Characteristics: TOTEM-POLE

The totem-pole output configuration offers high output current capability and low output impedance, providing efficient driving of MOSFETs.

Minimum Operating Temperature: -40 °C

The device can operate in extreme cold conditions down to -40°C, making it suitable for outdoor and harsh environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent corrosion resistance and ensures reliable connectivity over a long lifespan.

Terminal Position: DUAL

Having dual terminal positions allows for flexible PCB layout options and simplifies the installation process, enhancing user convenience.

Maximum Seated Height: 1.75 mm

The low maximum seated height facilitates a compact design and allows for easy integration into tight spaces, ideal for applications with limited vertical clearance.

Width: 3.9 mm

The narrow width of 3.9mm saves space on the PCB and enables a more efficient layout, particularly beneficial for densely populated circuit boards.

Output Polarity: TRUE

Having true output polarity ensures accurate and reliable signal transmission, preventing errors in the control of MOSFETs and enhancing overall system performance.

High Side Driver: YES

The presence of a high-side driver allows for driving power MOSFETs in high-side switching applications, expanding the range of potential uses for the product.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering of the device during assembly, guaranteeing a reliable connection.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, the device can withstand the high temperatures of the reflow soldering process, ensuring a secure and durable solder joint.

Length: 4.9 mm

The compact length of 4.9mm allows for efficient use of space on the PCB and enables a more streamlined and organized circuit layout.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, the temperature-grade feature ensures reliable performance under varying temperature conditions typically found in automotive environments.

Technology: BIMOS

The BiMOS technology combines the benefits of both Bipolar and CMOS technologies, providing high-speed performance and low power consumption.

Terminal Form: GULL WING

The gull-wing terminal form simplifies the soldering process during assembly and ensures secure mechanical attachment to the PCB, enhancing reliability.

Input Characteristics: SCHMITT TRIGGER

The Schmitt trigger input characteristics provide hysteresis and noise immunity, ensuring reliable and stable input signal detection in various operating conditions.

Nominal Supply Voltage: 10 V

The 10V nominal supply voltage is suitable for a wide range of applications and provides a stable power source for consistent performance.

Turn-on Time: 0.05 us

The fast turn-on time of 0.05 microseconds ensures quick and responsive switching of the MOSFETs, improving overall system efficiency and performance.

Terminal Pitch: 1.27 mm

The standard terminal pitch of 1.27mm allows for easy integration into standard PCB layouts and facilitates compatibility with widely available components.

Nominal Output Peak Current Limit: 2 A

The 2A nominal output peak current limit ensures safe operation with MOSFETs and protects the device from overcurrent conditions, enhancing reliability.

Interface IC Type: NAND GATE BASED MOSFET DRIVER

The interface IC type based on NAND gate technology provides a reliable and efficient driving signal for MOSFETs, enabling precise control and operation.

Turn-off Time: 0.05 us

The fast turn-off time of 0.05 microseconds ensures quick deactivation of the MOSFETs, reducing switching losses and improving overall efficiency.

Technical Specifications

MOSFET Gate Drivers TPS2812DG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 8V TO 40 V REGULATOR INPUT SUPPLY

High Side Driver:

YES

Input Characteristics:

SCHMITT TRIGGER

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Nominal Output Peak Current Limit:

2 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

10

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

4 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Technology:

BIMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

3.9 mm

Trade Compliance

TPS2812DG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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