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TPS2811P

Texas Instruments

TPS2811P by Texas Instruments

TPS2811P by Texas Instruments is a MOSFET Gate Driver with 2 channels, operating voltage range of 4-14 V. It features inverted output polarity, totem-pole output characteristics, and Schmitt trigger input. Ideal for automotive applications due to its high side driver capability and automotive temperature grade.

Median Price

$3.025

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3 parts In-Stock

1+ parts

$5.750

100+ parts

-

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-

10k+ parts

-

3

$5.750

-

-

-

Rochester

USA . 9,408 parts In-Stock

1+ parts

-

100+ parts

$2.710

1k+ parts

$2.420

10k+ parts

$2.280

9,408

-

$2.710

$2.420

$2.280

Verical

USA . 7,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.025

10k+ parts

$2.850

7,008

-

-

$3.025

$2.850

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,096 parts In-Stock

1+ parts

$2.242

100+ parts

-

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1,096

$2.242

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-

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TME

Poland . 15 parts In-Stock

1+ parts

$2.420

100+ parts

$1.610

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-

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15

$2.420

$1.610

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-

Vyrian

USA . 8,272 parts In-Stock

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8,272

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GSS - Global Semi Support

USA . 91 parts In-Stock

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91

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Touchstone Systems

USA . 70 parts In-Stock

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70

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

1+ parts

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50

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LIBRA Elektronik GmbH

Germany . 17 parts In-Stock

1+ parts

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17

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Speed Components Ltd

Israel . 10 parts In-Stock

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10

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LWI Electronics Inc

India . 5 parts In-Stock

1+ parts

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5

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MISTER SPROCKETS

USA . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 4,619 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

1k+ parts

$1.950

10k+ parts

-

4,619

$2.010

$1.960

$1.950

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Corphita

USA . 918 parts In-Stock

1+ parts

$2.124

100+ parts

-

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918

$2.124

-

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Parana Technologies

USA . 763 parts In-Stock

1+ parts

$10.350

100+ parts

-

1k+ parts

$10.869

10k+ parts

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763

$10.350

-

$10.869

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DigiPath Technology Company

USA . 1,242 parts In-Stock

1+ parts

$11.396

100+ parts

$10.485

1k+ parts

-

10k+ parts

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1,242

$11.396

$10.485

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ChromeModa Solutions

Germany . 941 parts In-Stock

1+ parts

$11.629

100+ parts

$9.536

1k+ parts

-

10k+ parts

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941

$11.629

$9.536

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-

IDEA Electronic Components Group

UK . 487 parts In-Stock

1+ parts

$11.629

100+ parts

$11.048

1k+ parts

$10.466

10k+ parts

-

487

$11.629

$11.048

$10.466

-

Microchip USA

USA . 1,414 parts In-Stock

1+ parts

$54.080

100+ parts

$53.310

1k+ parts

$52.920

10k+ parts

$52.530

1,414

$54.080

$53.310

$52.920

$52.530

A-Z Elektronik GmbH

Germany . 5,672 parts In-Stock

1+ parts

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5,672

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Assy Fe

Spain . 27 parts In-Stock

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27

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Overview

Experience top-notch quality and reliability with the TPS2811P MOSFET Gate Driver by Texas Instruments. This versatile component is designed to deliver exceptional performance in a wide range of applications, offering customers unparalleled value and benefits. With its advanced technology and automotive-grade temperature grade, this dual-channel driver provides inverted output polarity, high side functionality, and a fast turn-on/off time, making it ideal for demanding projects where precision and efficiency are crucial. Trust Texas Instruments for innovative solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the gate driver.

Maximum Supply Voltage: 14 V

Can handle higher supply voltages, making it suitable for a wide range of applications.

No. of Functions: 2

Provides versatility and flexibility in driving multiple MOSFETs.

Maximum Operating Temperature: 125 °C

Can operate under high temperature conditions, ideal for automotive applications.

Output Characteristics: TOTEM-POLE

Provides both sourcing and sinking capabilities, allowing for efficient switching of MOSFETs.

High Side Driver: YES

Enables driving of both high-side and low-side MOSFETs, increasing design options.

Technology: BIMOS

Combines bipolar and CMOS technologies for improved performance and efficiency.

Input Characteristics: SCHMITT TRIGGER

Provides hysteresis in the input signal, improving noise immunity and signal integrity.

Technical Specifications

MOSFET Gate Drivers TPS2811P attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 8V TO 40 V REGULATOR INPUT SUPPLY

High Side Driver:

YES

Input Characteristics:

SCHMITT TRIGGER

Interface IC Type:

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Length:

9.81 mm

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

2 A

Nominal Output Peak Current Limit:

2 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

10

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.005 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

4 V

Nominal Supply Voltage:

10 V

Surface Mount:

NO

Technology:

BIMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

7.62 mm

Trade Compliance

TPS2811P Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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