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TPS2375DRG4

Texas Instruments

TPS2375DRG4 by Texas Instruments

TPS2375DRG4 by Texas Instruments is a Power Management IC with 48V nominal voltage. It has 8 terminals, operates b/w -40 to 85°C, and supports power supply circuits. The package is small outline, surface mountable, with nickel palladium gold finish suitable for industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 10,600 parts In-Stock

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Vyrian

USA . 4,963 parts In-Stock

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Digiode

USA . 2,291 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Ampacity Inc.

Singapore . 902 parts In-Stock

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$1.500

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902

$1.500

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Parana Technologies

USA . 1,488 parts In-Stock

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$3.087

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$3.605

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ChromeModa Solutions

Germany . 3,017 parts In-Stock

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$3.469

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$2.845

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$3.469

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IDEA Electronic Components Group

UK . 1,459 parts In-Stock

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$3.469

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$3.122

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One Stop Electronics

USA . 724 parts In-Stock

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$6.500

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AZTECH Wire

Italy . 879 parts In-Stock

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$14.711

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Corphita

USA . 4,336 parts In-Stock

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Perfect Parts

USA . 3,664 parts In-Stock

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DigiPath Technology Company

USA . 1,230 parts In-Stock

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Microchip USA

USA . 1,170 parts In-Stock

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Bastille Electronics

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Kepictronics

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Overview

Power up your devices with the TPS2375DRG4 by Texas Instruments, a high-quality power management IC that offers exceptional value and benefits. Manufactured by industry leader Texas Instruments, this IC is designed for a wide range of applications, ensuring reliable and efficient power supply support. With a nominal supply voltage of 48V and a temperature grade of industrial, this small outline package IC maximizes performance while minimizing operating costs. Experience seamless power management with the TPS2375DRG4 and elevate your devices to the next level of efficiency and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the components, ensuring reliability and durability.

Nominal Supply Voltage (Vsup): 48 V

Operating at a nominal voltage of 48V allows for compatibility with a wide range of power sources and applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this power management IC can withstand demanding environmental conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of NICKEL PALLADIUM GOLD terminal finish enhances conductivity and corrosion resistance, ensuring reliable electrical connections.

Maximum Supply Current (Isup): 0.45 mA

Low supply current requirements of 0.45 mA result in efficient power consumption and reduced heat generation.

Technical Specifications

Power Management ICs TPS2375DRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

48

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.45 mA

Maximum Supply Voltage (Vsup):

57 V

Minimum Supply Voltage (Vsup):

0 V

Nominal Supply Voltage (Vsup):

48 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

TPS2375DRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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