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TPS2011DR

Texas Instruments

TPS2011DR by Texas Instruments

TPS2011DR by Texas Instruments is a Power Management IC with 8 terminals, operating voltage range of 2.7V to 5.5V, and temperature grade of INDUSTRIAL. It is designed for POWER SUPPLY SUPPORT CIRCUITS in applications requiring a small outline package with surface mount capability.

Median Price

$1.439

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 12,500 parts In-Stock

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$1.439

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$1.439

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Vyrian

USA . 3,780 parts In-Stock

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3,780

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Digiode

USA . 3,415 parts In-Stock

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Sensible Micro Corp

USA . 2,500 parts In-Stock

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2,500

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A&K Electronics

USA . 380 parts In-Stock

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380

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Bristol Electronics

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380

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Distributors (Availability)

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AZTECH Wire

Italy . 174 parts In-Stock

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$10.280

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$10.280

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Microchip USA

USA . 3,590 parts In-Stock

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$10.721

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$10.721

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Parana Technologies

USA . 1,184 parts In-Stock

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$12.917

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$13.405

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$12.917

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$13.405

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ChromeModa Solutions

Germany . 4,760 parts In-Stock

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$14.514

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$11.901

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$14.514

$11.901

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IDEA Electronic Components Group

UK . 2,358 parts In-Stock

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$14.514

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$13.788

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$13.063

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$13.063

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Formix International (Excess)

India . 24,127 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 6,980 parts In-Stock

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Corphita

USA . 2,124 parts In-Stock

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DigiPath Technology Company

USA . 897 parts In-Stock

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$13.086

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897

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A-Z Elektronik GmbH

Germany . 345 parts In-Stock

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345

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Legend Electronics Inc. (Excess)

USA . 332 parts In-Stock

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Kepictronics

USA . 50 parts In-Stock

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Overview

Upgrade your power management system with the TPS2011DR by Texas Instruments. Manufactured with high-quality materials and advanced technology, this power management IC offers unparalleled reliability and performance. Ideal for a wide range of applications, this product provides efficient power supply support without compromising on safety or durability. Experience the value and benefits of Texas Instruments' expertise in power management with the TPS2011DR - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material is lightweight and cost-effective, making the product suitable for high volume manufacturing.

Surface Mount: YES

Surface mount technology allows for easy installation on PCBs, saving space and enabling automated assembly.

Nominal Supply Voltage (Vsup): 3 V

Optimal voltage supply ensures efficient power management and performance of the device.

No. of Terminals: 8

Sufficient terminals provide connectivity options and flexibility in circuit design.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes the product suitable for various environmental conditions and applications.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish ensures good conductivity and reliability in electrical connections.

Maximum Seated Height: 1.75 mm

Low profile design saves space and allows for compact device integration.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance ensures reliable operation in harsh industrial environments.

Maximum Supply Current (Isup): 0.1 mA

Low power consumption helps in energy efficiency and extends the battery life of the device.

Terminal Form: GULL WING

Gull wing terminals provide mechanical strength and secure attachment to the PCB.

Technical Specifications

Power Management ICs TPS2011DR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Current (Isup):

.1 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

TPS2011DR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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