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TPA751DRG4

Texas Instruments

TPA751DRG4 by Texas Instruments

TPA751DRG4 by Texas Instruments is an audio amplifier IC with 8 terminals, operating at -40 to 85°C. It offers 0.35W output power with 0.5% harmonic distortion and a bandwidth of 0.02 kHz. Ideal for audio applications requiring small outline packages and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,644 parts In-Stock

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7,644

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Digiode

USA . 250 parts In-Stock

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250

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Distributors (Availability)

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Parana Technologies

USA . 423 parts In-Stock

1+ parts

$1.960

100+ parts

-

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$2.494

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423

$1.960

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$2.494

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DigiPath Technology Company

USA . 831 parts In-Stock

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$2.158

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$1.985

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831

$2.158

$1.985

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IDEA Electronic Components Group

UK . 766 parts In-Stock

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$2.202

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$1.982

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766

$2.202

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$1.982

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ChromeModa Solutions

Germany . 504 parts In-Stock

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$2.202

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$1.806

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504

$2.202

$1.806

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AZTECH Wire

Italy . 267 parts In-Stock

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$9.526

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$9.526

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Ampacity Inc.

Singapore . 414 parts In-Stock

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$9.800

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414

$9.800

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One Stop Electronics

USA . 507 parts In-Stock

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$18.800

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507

$18.800

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Continental Prestige Electronics

USA . 6,616 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,212 parts In-Stock

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Kepictronics

USA . 4,550 parts In-Stock

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Corphita

USA . 1,902 parts In-Stock

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Argo Parts USA

USA . 1,392 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Enhance your audio experience with the TPA751DRG4 by Texas Instruments, a top-quality audio amplifier perfect for a wide range of applications. Crafted by the reputable manufacturer, Texas Instruments, this amplifier delivers unbeatable performance with minimal distortion. Whether you're looking to boost the sound quality of your speakers or headphones, this compact and efficient amplifier is sure to exceed your expectations. Elevate your audio setup today with the TPA751DRG4 and enjoy crystal-clear sound like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and protects the internal components of the amplifier.

Surface Mount: YES

Being surface mountable, this amplifier can be easily integrated into circuit boards, saving space and allowing for efficient design.

General IC Type: AUDIO AMPLIFIER

Designed specifically for audio amplification, this IC type ensures high quality sound output.

Nominal Output Power: 0.35 W

With a nominal output power of 0.35W, this amplifier is suitable for various audio applications such as portable speakers or headphones.

Technology: CMOS

The CMOS technology used in this amplifier ensures low power consumption and efficient operation.

Nominal Bandwidth: 0.02 kHz

The amplifier has a nominal bandwidth of 0.02 kHz, making it ideal for audio amplification in low to mid-frequency ranges.

Technical Specifications

Audio & Video Amplifiers TPA751DRG4 attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Additional Features:

DEVICE FEATURES SHUTDOWN MODE FOR POWER SENSITIVE APPLICATIONS

Nominal Bandwidth:

.02 kHz

General IC Type:

Harmonic Distortion:

.5 %

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

.35 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

2.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

TPA751DRG4 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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