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TMS320DM8168BCYG2

Texas Instruments

TMS320DM8168BCYG2 by Texas Instruments

TMS320DM8168BCYG2 by Texas Instruments is a 32-bit DSP with 16-bit external data bus, clocked at 27 MHz. It features 16384 RAM words and operates on a supply voltage range of 0.95V to 1.05V. Ideal for digital signal processing applications requiring low power consumption and high performance in a compact form factor.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 8,813 parts In-Stock

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Digiode

USA . 781 parts In-Stock

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Semtec, LLC

USA . 5 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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AZTECH Wire

Italy . 758 parts In-Stock

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$14.495

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One Stop Electronics

USA . 1,096 parts In-Stock

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Parana Technologies

USA . 2,376 parts In-Stock

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$35.226

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DigiPath Technology Company

USA . 2,260 parts In-Stock

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$30.147

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$27.735

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ChromeModa Solutions

Germany . 5,711 parts In-Stock

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$30.762

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$25.225

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IDEA Electronic Components Group

UK . 2,059 parts In-Stock

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$27.686

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Corohmni

South Africa . 1,957 parts In-Stock

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$43.888

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S.R.D Solutions

India . 30,000 parts In-Stock

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Corphita

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Microchip USA

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Kepictronics

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Overview

Unlock the full potential of your projects with the TMS320DM8168BCYG2 by Texas Instruments, a cutting-edge Digital Signal Processor designed to deliver unmatched performance and efficiency. Manufactured by industry leader Texas Instruments, this DSP offers a wide range of applications in various industries. Its advanced technology ensures superior quality and reliability, making it the perfect choice for all your processing needs. Experience seamless operation and enhanced productivity with the TMS320DM8168BCYG2, setting new standards in digital signal processing.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers both durability and affordability, making this product a cost-effective choice for various applications.

Maximum Supply Voltage: 1.05 V

With a maximum supply voltage of 1.05 V, this DSP is optimized for low power consumption, making it suitable for battery-operated devices.

Bit Size: 32

The 32-bit architecture allows for high-speed processing and improved performance, making this DSP ideal for complex signal processing tasks.

RAM Words: 16384

With a large RAM capacity of 16384 words, this DSP can efficiently handle a significant amount of data, making it suitable for applications requiring intensive data processing.

Maximum Clock Frequency: 27 MHz

The high maximum clock frequency of 27 MHz enables fast data processing and real-time operation, making this DSP suitable for time-sensitive applications.

Technology: CMOS

CMOS technology offers low power consumption and high integration density, making this DSP energy-efficient and compact for various electronic applications.

Technical Specifications

Digital Signal Processors (DSPs) TMS320DM8168BCYG2 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

28

Barrel Shifter:

NO

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

27 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B1031

JESD-609 Code:

e1

Length:

25 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA1031,37X37,25

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

245

Power Supplies (V):

1

Qualification:

Not Qualified

RAM Words:

16384

Maximum Seated Height:

3.31 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.05 V

Minimum Supply Voltage:

.95 V

Nominal Supply Voltage:

1 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

25 mm

Peripheral IC Type:

Trade Compliance

TMS320DM8168BCYG2 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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