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TLV822IDR

Texas Instruments

TLV822IDR by Texas Instruments

TLV822IDR by Texas Instruments is a dual operational amplifier with 4000uV max input offset voltage and 73dB nominal CMRR. Ideal for industrial applications, it operates at -40 to 85 °C with micropower consumption of 0.9mA at max supply voltage of 5.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,893 parts In-Stock

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8,893

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Digiode

USA . 4,532 parts In-Stock

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4,532

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,828 parts In-Stock

1+ parts

$6.234

100+ parts

-

1k+ parts

$6.992

10k+ parts

-

1,828

$6.234

-

$6.992

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DigiPath Technology Company

USA . 950 parts In-Stock

1+ parts

$6.864

100+ parts

$6.315

1k+ parts

-

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950

$6.864

$6.315

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ChromeModa Solutions

Germany . 5,738 parts In-Stock

1+ parts

$7.004

100+ parts

$5.743

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5,738

$7.004

$5.743

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IDEA Electronic Components Group

UK . 1,717 parts In-Stock

1+ parts

$7.004

100+ parts

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$6.304

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1,717

$7.004

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$6.304

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One Stop Electronics

USA . 278 parts In-Stock

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$7.410

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278

$7.410

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AZTECH Wire

Italy . 457 parts In-Stock

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$7.909

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457

$7.909

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Corphita

USA . 4,247 parts In-Stock

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Overview

Unlock the power of precision and reliability with the TLV822IDR Operational Amplifier by Texas Instruments. Designed with advanced technology and high-quality materials, this dual-function op amp offers exceptional performance in a compact package. Whether you're working on industrial automation, portable electronics, or sensor interfaces, the TLV822IDR delivers superior functionality with minimal power consumption. Experience seamless integration and unmatched value with this versatile component from a trusted industry leader.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides a good balance of strength and cost-effectiveness, making this product durable and affordable.

Maximum Input Offset Voltage: 4000 uV

The low input offset voltage ensures minimal errors in the output signal, making this op amp suitable for precision applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 73 dB

The high common mode reject ratio helps in rejecting common noise present in the input signal, resulting in a cleaner output.

Nominal Supply Voltage / Vsup (V): 2.7

Operates at a low supply voltage, making it suitable for battery-powered applications or low-power systems.

Nominal Unity Gain Bandwidth: 7000 kHz

With a high unity gain bandwidth, this op amp is capable of handling high-frequency signals accurately and efficiently.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture offers excellent stability and performance, making this op amp a reliable choice for various applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV822IDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

73 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

18000

Minimum Slew Rate:

2 V/us

Nominal Slew Rate:

2 V/us

Peak Bias Current:

140 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

900 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV822IDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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