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TLV2471IDBVRG4

Texas Instruments

TLV2471IDBVRG4 by Texas Instruments

TLV2471IDBVRG4 by Texas Instruments is an Operational Amplifier with 2400uV Max Input Offset Voltage, 78dB Nominal CMRR, and 25000 Min Voltage Gain. Ideal for automotive applications due to its low-bias design and compact package style. Operating at -40 to 125 °C, it offers high performance in a small footprint.

Median Price

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Lifecycle Status

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7

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1k+

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Ampacity Inc.

Singapore . 19 parts In-Stock

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Semicontronic

India . 19 parts In-Stock

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$3.325

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Corohmni

South Africa . 160 parts In-Stock

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Parana Technologies

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DigiPath Technology Company

USA . 1,409 parts In-Stock

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ChromeModa Solutions

Germany . 2,051 parts In-Stock

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IDEA Electronic Components Group

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AZTECH Wire

Italy . 462 parts In-Stock

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Overview

Discover the unparalleled performance of the TLV2471IDBVRG4 operational amplifier by Texas Instruments. Crafted with precision and reliability, this compact yet powerful device is designed to excel in a wide range of applications. From automotive to industrial settings, this op amp delivers unmatched quality and efficiency. With minimal bias current and maximum input offset voltage, the TLV2471IDBVRG4 offers exceptional value and superior performance. Trust Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the TLV2471IDBVRG4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable.

Maximum Input Offset Voltage: 2400 uV

The low maximum input offset voltage ensures accurate signal processing.

Maximum Average Bias Current (IIB): 0.0003 uA

The low bias current ensures minimal power consumption and accurate signal amplification.

Surface Mount: YES

Being surface mountable allows for easy and secure mounting on a circuit board.

Nominal Common Mode Reject Ratio: 78 dB

The high common mode reject ratio ensures efficient rejection of common mode noise.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes it suitable for low power applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance in a variety of environments.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high speed operation.

Amplifier Type: OPERATIONAL AMPLIFIER

The use of operational amplifier ensures accurate signal amplification and processing.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2471IDBVRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

78 dB

Minimum Common Mode Rejection Ratio (CMRR ):

64 dB

Input Offset Voltage Limit:

2400 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.6 V/us

Nominal Slew Rate:

1.4 V/us

Maximum Input Offset Current (IIO):

50 pA

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

900 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

TLV2471IDBVRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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