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TLV2463AQDRQ1

Texas Instruments

TLV2463AQDRQ1 by Texas Instruments

TLV2463AQDRQ1 by Texas Instruments is a CMOS Operational Amplifier with 1700uV Max Input Offset Voltage, 80dB Nominal CMRR, and 5200kHz Unity Gain Bandwidth. Ideal for automotive applications due to AEC-Q100 screening level and low bias current of 0.000075uA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,086 parts In-Stock

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Digiode

USA . 1,927 parts In-Stock

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Semicontronic

India . 762 parts In-Stock

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$1.410

100+ parts

$1.375

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$1.368

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762

$1.410

$1.375

$1.368

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Parana Technologies

USA . 897 parts In-Stock

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$2.577

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$3.068

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IDEA Electronic Components Group

UK . 672 parts In-Stock

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$2.895

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$2.606

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$2.895

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ChromeModa Solutions

Germany . 284 parts In-Stock

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$2.895

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$2.374

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$2.895

$2.374

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One Stop Electronics

USA . 568 parts In-Stock

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$5.410

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568

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AZTECH Wire

Italy . 549 parts In-Stock

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$8.524

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$8.524

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QUARKTWIN TECHNOLOGY LTD

USA . 15,640 parts In-Stock

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Microchip USA

USA . 3,205 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 981 parts In-Stock

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$2.610

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Overview

Unleash the power of precision with the TLV2463AQDRQ1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality operational amplifiers that are perfect for a wide range of applications. With its high performance and reliability, this product offers unmatched value to customers, providing precise and efficient operation. Trust in Texas Instruments for all your operational amplifier needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 1700 uV

Low input offset voltage ensures accuracy in signal processing and reduces errors in the output signal.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in rejecting common noise signals, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 3

Low nominal supply voltage makes this product suitable for low power applications or portable devices.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the product to be used in various environmental conditions without compromising performance.

Nominal Unity Gain Bandwidth: 5200 kHz

High unity gain bandwidth enables the amplifier to operate efficiently over a wide range of frequencies, making it versatile for different applications.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, making it energy-efficient and reliable.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is suitable for various signal processing applications such as amplification, filtering, and voltage regulation.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2463AQDRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

1700 uV

Minimum Voltage Gain:

28000

Minimum Slew Rate:

0.8 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

75 pA

Maximum Bias Current (IIB) @25 °C:

14 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G14

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2463AQDRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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