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TLV2422QDRQ1

Texas Instruments

TLV2422QDRQ1 by Texas Instruments

TLV2422QDRQ1 by Texas Instruments is an Operational Amplifier with 1800uV Max Input Offset Voltage, 83dB CMRR, and 46kHz Unity Gain Bandwidth. Ideal for automotive applications due to AEC-Q100 screening level and micropower technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,964 parts In-Stock

1+ parts

-

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3,964

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Digiode

USA . 3,447 parts In-Stock

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-

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3,447

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,465 parts In-Stock

1+ parts

$4.410

100+ parts

-

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1,465

$4.410

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Parana Technologies

USA . 1,586 parts In-Stock

1+ parts

$6.307

100+ parts

-

1k+ parts

$7.057

10k+ parts

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1,586

$6.307

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$7.057

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DigiPath Technology Company

USA . 164 parts In-Stock

1+ parts

$6.944

100+ parts

$6.389

1k+ parts

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10k+ parts

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164

$6.944

$6.389

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ChromeModa Solutions

Germany . 5,110 parts In-Stock

1+ parts

$7.086

100+ parts

$5.811

1k+ parts

-

10k+ parts

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5,110

$7.086

$5.811

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IDEA Electronic Components Group

UK . 193 parts In-Stock

1+ parts

$7.086

100+ parts

-

1k+ parts

$6.377

10k+ parts

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193

$7.086

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$6.377

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AZTECH Wire

Italy . 334 parts In-Stock

1+ parts

$10.026

100+ parts

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334

$10.026

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Microchip USA

USA . 5,330 parts In-Stock

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5,330

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Corphita

USA . 2,510 parts In-Stock

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2,510

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Overview

Experience exceptional performance and reliability with the TLV2422QDRQ1 Operational Amplifier by Texas Instruments. This cutting-edge amplifier is ideal for automotive applications, offering low-bias operation and micropower technology. With a nominal unity gain bandwidth of 46 kHz and a minimum voltage gain of 2000, this amplifier delivers superior signal processing capabilities. Trust in Texas Instruments' reputation for quality and innovation, and discover the value and benefits that the TLV2422QDRQ1 can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the operational amplifier, making it suitable for various applications.

Maximum Input Offset Voltage: 1800 uV

The low maximum input offset voltage ensures accurate and precise signal amplification, making this operational amplifier reliable for sensitive measurements.

Surface Mount: YES

Being surface mountable, this operational amplifier is easy to install on circuit boards, saving space and facilitating automated assembly processes.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V makes this operational amplifier suitable for low power applications, helping to conserve energy and reduce overall system cost.

Technology: CMOS

The CMOS technology used in this operational amplifier ensures low power consumption, high noise immunity, and wide supply voltage range, making it ideal for battery-operated devices and portable applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2422QDRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±5/2.7/10 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

46 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Input Offset Voltage Limit:

1800 uV

Minimum Voltage Gain:

2000

Minimum Slew Rate:

0.008 V/us

Nominal Slew Rate:

0.02 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

175 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2422QDRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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